Strained InGaAs/InAlAs quantum wells for complementary III–V transistors

Quantum wells of InGaAs clad by InAlAs were grown on AlGaAsSb buffer layers by molecular beam epitaxy. The buffer layer lattice parameters were near 6.0Å, yielding tensile strains up to 2% in the InGaAs and InAlAs. Room-temperature electron mobilities of 9000–11,000cm2/Vs were achieved. Field-effect transistors (FETs) were fabricated and exhibited good DC and RF characteristics. Previous work demonstrated compressively-strained GaSb quantum wells on similar buffer layers with high hole mobilities and good transistor performance. Hence, a single buffer layer of AlGaAsSb should be suitable for complementary circuits comprised of n-channel FETs based on the mature InGaAs/InAlAs technology and p-channel FETs based on high-mobility antimonides. •MBE growth of InGaAs/InAlAs QWs on AlGaAsSb buffer layers.•Electron mobilities of 9000–11,000cm2/Vs at 300K.•QWs are in 1–2% tensile strain, allowing integration with p-InGaSb channel FETs.•Application is transistors for III–V complementary circuits.