Rapid sintering of silicon nitride foams decorated with one-dimensional nanostructures by intense thermal radiation

Silicon nitride foams were prepared by direct foaming and subsequent rapid sintering at 1600 °C. The intense thermal radiation generated under the pressureless spark plasma sintering condition facilitated necking of Si 3 N 4 grains. The prepared foams possessed a porosity of ∼80 vol% and a compressi...

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Veröffentlicht in:Science and technology of advanced materials 2014-08, Vol.15 (4), p.045003-7
Hauptverfasser: Li, Duan, Guzi de Moraes, Elisângela, Guo, Peng, Zou, Ji, Zhang, Junzhan, Colombo, Paolo, Shen, Zhijian
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container_issue 4
container_start_page 045003
container_title Science and technology of advanced materials
container_volume 15
creator Li, Duan
Guzi de Moraes, Elisângela
Guo, Peng
Zou, Ji
Zhang, Junzhan
Colombo, Paolo
Shen, Zhijian
description Silicon nitride foams were prepared by direct foaming and subsequent rapid sintering at 1600 °C. The intense thermal radiation generated under the pressureless spark plasma sintering condition facilitated necking of Si 3 N 4 grains. The prepared foams possessed a porosity of ∼80 vol% and a compressive strength of ∼10 MPa, which required only ∼30 min for the entire sintering processes. Rapid growth of one-dimensional SiC nanowires from the cell walls was also observed. Thermodynamic calculations indicated that the vapor-liquid-solid model is applicable to the formation of SiC nanowires under vacuum.
doi_str_mv 10.1088/1468-6996/15/4/045003
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The intense thermal radiation generated under the pressureless spark plasma sintering condition facilitated necking of Si 3 N 4 grains. The prepared foams possessed a porosity of ∼80 vol% and a compressive strength of ∼10 MPa, which required only ∼30 min for the entire sintering processes. Rapid growth of one-dimensional SiC nanowires from the cell walls was also observed. 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Technol. Adv. Mater</addtitle><date>2014-08-01</date><risdate>2014</risdate><volume>15</volume><issue>4</issue><spage>045003</spage><epage>7</epage><pages>045003-7</pages><issn>1468-6996</issn><issn>1878-5514</issn><eissn>1878-5514</eissn><coden>STAMCV</coden><abstract>Silicon nitride foams were prepared by direct foaming and subsequent rapid sintering at 1600 °C. The intense thermal radiation generated under the pressureless spark plasma sintering condition facilitated necking of Si 3 N 4 grains. The prepared foams possessed a porosity of ∼80 vol% and a compressive strength of ∼10 MPa, which required only ∼30 min for the entire sintering processes. Rapid growth of one-dimensional SiC nanowires from the cell walls was also observed. 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subjects Compressive strength
foam
Foaming
Foams
materialkemi
Materials Chemistry
nanowire
Nanowires
Plasma sintering
Porosity
Silicon carbide
Silicon nitride
Sintering (powder metallurgy)
Spark plasma sintering
Thermal radiation
thermodynamics
title Rapid sintering of silicon nitride foams decorated with one-dimensional nanostructures by intense thermal radiation
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