Rapid sintering of silicon nitride foams decorated with one-dimensional nanostructures by intense thermal radiation

Silicon nitride foams were prepared by direct foaming and subsequent rapid sintering at 1600 °C. The intense thermal radiation generated under the pressureless spark plasma sintering condition facilitated necking of Si 3 N 4 grains. The prepared foams possessed a porosity of ∼80 vol% and a compressive strength of ∼10 MPa, which required only ∼30 min for the entire sintering processes. Rapid growth of one-dimensional SiC nanowires from the cell walls was also observed. Thermodynamic calculations indicated that the vapor-liquid-solid model is applicable to the formation of SiC nanowires under vacuum.