Effect of Nitridation on Indium-Composition of InGaN Films

The Present Study Aims to Understand the Relation between the Nitridation and Indium-Composition of Ingan Grown on Sapphire Substrate Using the Metalorganic Vapor Phase Epitaxy through X-Ray Diffraction Reciprocal Space Mapping Measurements. In-Composition of InGaN on Nitrided Sapphire Substrate Inc...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Key engineering materials 2012-01, Vol.508, p.193-198
Hauptverfasser:	Kanako, Shojiki, Matsuoka, Takashi, Ji, Shi Yang, Kumar, P.Suresh, Katayama, Ryuji, Hanada, Takashi, Choi, Jung Hun
Format:	Artikel
Sprache:	eng
Schlagworte:	Diffraction Gallium nitrides Indium Indium gallium nitrides Reciprocal space Sapphire Strain X-rays
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!