Effect of Nitridation on Indium-Composition of InGaN Films

The Present Study Aims to Understand the Relation between the Nitridation and Indium-Composition of Ingan Grown on Sapphire Substrate Using the Metalorganic Vapor Phase Epitaxy through X-Ray Diffraction Reciprocal Space Mapping Measurements. In-Composition of InGaN on Nitrided Sapphire Substrate Increased to 13% which Is Higher than the Sample without Nitridation with 7%. Also, Flat Surface Was Observed in the Nitrided Sample. Two Times Larger in-Plane Strain Was Induced at the Nitired Sample. Ingan Grown on Low-Temperature Gan Buffer, however, Did Not Show Clear Effect of Nitridation. The Two Investigated Samples Showed Similar Indium Composition, Surface Flatness, and in-Plane Strain with and without Nitridation. Differences of Indium Incorporation and Relaxation of in-Plane Strain Were Attributed to the Effect of AIN Formed by Nitridation Process.