Effect of Nitridation on Indium-Composition of InGaN Films
The Present Study Aims to Understand the Relation between the Nitridation and Indium-Composition of Ingan Grown on Sapphire Substrate Using the Metalorganic Vapor Phase Epitaxy through X-Ray Diffraction Reciprocal Space Mapping Measurements. In-Composition of InGaN on Nitrided Sapphire Substrate Inc...
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| Veröffentlicht in: | Key engineering materials 2012-01, Vol.508, p.193-198 |
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| container_title | Key engineering materials |
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| creator | Kanako, Shojiki Matsuoka, Takashi Ji, Shi Yang Kumar, P.Suresh Katayama, Ryuji Hanada, Takashi Choi, Jung Hun |
| description | The Present Study Aims to Understand the Relation between the Nitridation and Indium-Composition of Ingan Grown on Sapphire Substrate Using the Metalorganic Vapor Phase Epitaxy through X-Ray Diffraction Reciprocal Space Mapping Measurements. In-Composition of InGaN on Nitrided Sapphire Substrate Increased to 13% which Is Higher than the Sample without Nitridation with 7%. Also, Flat Surface Was Observed in the Nitrided Sample. Two Times Larger in-Plane Strain Was Induced at the Nitired Sample. Ingan Grown on Low-Temperature Gan Buffer, however, Did Not Show Clear Effect of Nitridation. The Two Investigated Samples Showed Similar Indium Composition, Surface Flatness, and in-Plane Strain with and without Nitridation. Differences of Indium Incorporation and Relaxation of in-Plane Strain Were Attributed to the Effect of AIN Formed by Nitridation Process. |
| doi_str_mv | 10.4028/www.scientific.net/KEM.508.193 |
| format | Article |
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| source | Scientific.net Journals |
| subjects | Diffraction Gallium nitrides Indium Indium gallium nitrides Reciprocal space Sapphire Strain X-rays |
| title | Effect of Nitridation on Indium-Composition of InGaN Films |
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