Photoluminescence from GaN layers at high temperatures as a candidate for in situ monitoring in MOVPE
Efficient photoluminescence (PL) spectra from GaN and InGaN layers at temperatures up to 1100K are observed with low noise floor and high dynamic resolution. A number of detailed spectral features in the PL can be directly linked to physical properties of the epitaxial grown layer. The method is sug...
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| Veröffentlicht in: | Journal of crystal growth 2014-07, Vol.397, p.24-28 |
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| container_title | Journal of crystal growth |
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| creator | Prall, C. Ruebesam, M. Weber, C. Reufer, M. Rueter, D. |
| description | Efficient photoluminescence (PL) spectra from GaN and InGaN layers at temperatures up to 1100K are observed with low noise floor and high dynamic resolution. A number of detailed spectral features in the PL can be directly linked to physical properties of the epitaxial grown layer. The method is suggested as an in situ monitoring tool during epitaxy of nitride LED and laser structures. Layer properties like thickness, band gap or film temperature distribution are feasible.
•PL spectra from GaN at high temperatures typical for MOVPE GaN production.•Novelty: Dynamic PL signals well above the noise floor at 1100K from GaN and InGaN.•PL spectra provide information about temperature, thickness and band gap.•Lean optical setup to approach narrow MOVPE geometries in industrial production.•The method might become a useful tool for monitoring in LED production. |
| doi_str_mv | 10.1016/j.jcrysgro.2014.04.001 |
| format | Article |
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•PL spectra from GaN at high temperatures typical for MOVPE GaN production.•Novelty: Dynamic PL signals well above the noise floor at 1100K from GaN and InGaN.•PL spectra provide information about temperature, thickness and band gap.•Lean optical setup to approach narrow MOVPE geometries in industrial production.•The method might become a useful tool for monitoring in LED production.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2014.04.001</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A1. Characterization ; A2. Metalorganic vapor phase epitaxy ; Applied sciences ; B1. Nitrides ; B3. Light emitting diodes ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Crystal growth ; Electronics ; Epitaxial growth ; Exact sciences and technology ; Gallium nitrides ; Indium gallium nitrides ; Low noise ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Monitoring ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optoelectronic devices ; Photoluminescence ; Physics ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Spectra ; Structure and morphology; thickness ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thin film structure and morphology ; Vapor phase epitaxy; growth from vapor phase</subject><ispartof>Journal of crystal growth, 2014-07, Vol.397, p.24-28</ispartof><rights>2014 The Authors</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c522t-3419bb7110aa2a9963616c5fec8aee8d05c2c8e515bad63df1a592766d0003c23</citedby><cites>FETCH-LOGICAL-c522t-3419bb7110aa2a9963616c5fec8aee8d05c2c8e515bad63df1a592766d0003c23</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.jcrysgro.2014.04.001$$EHTML$$P50$$Gelsevier$$Hfree_for_read</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=28475061$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Prall, C.</creatorcontrib><creatorcontrib>Ruebesam, M.</creatorcontrib><creatorcontrib>Weber, C.</creatorcontrib><creatorcontrib>Reufer, M.</creatorcontrib><creatorcontrib>Rueter, D.</creatorcontrib><title>Photoluminescence from GaN layers at high temperatures as a candidate for in situ monitoring in MOVPE</title><title>Journal of crystal growth</title><description>Efficient photoluminescence (PL) spectra from GaN and InGaN layers at temperatures up to 1100K are observed with low noise floor and high dynamic resolution. A number of detailed spectral features in the PL can be directly linked to physical properties of the epitaxial grown layer. The method is suggested as an in situ monitoring tool during epitaxy of nitride LED and laser structures. Layer properties like thickness, band gap or film temperature distribution are feasible.
•PL spectra from GaN at high temperatures typical for MOVPE GaN production.•Novelty: Dynamic PL signals well above the noise floor at 1100K from GaN and InGaN.•PL spectra provide information about temperature, thickness and band gap.•Lean optical setup to approach narrow MOVPE geometries in industrial production.•The method might become a useful tool for monitoring in LED production.</description><subject>A1. Characterization</subject><subject>A2. Metalorganic vapor phase epitaxy</subject><subject>Applied sciences</subject><subject>B1. Nitrides</subject><subject>B3. Light emitting diodes</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Crystal growth</subject><subject>Electronics</subject><subject>Epitaxial growth</subject><subject>Exact sciences and technology</subject><subject>Gallium nitrides</subject><subject>Indium gallium nitrides</subject><subject>Low noise</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Monitoring</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optoelectronic devices</subject><subject>Photoluminescence</subject><subject>Physics</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Spectra</subject><subject>Structure and morphology; thickness</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Thin film structure and morphology</subject><subject>Vapor phase epitaxy; growth from vapor phase</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNqFkUFr3DAQhUVpodukf6HoEujFG41syd5bQkiTQJrk0OQqZuXxrhbb2kpyYf99ZTbJNfCQYPhmHjOPsR8gliBAn--WOxsOcRP8UgqoliJLwCe2gKYuCyWE_MwW-ZWFkFXzlX2LcScyoUEsGD1tffL9NLiRoqXREu-CH_gNPvAeDxQix8S3brPliYY9BUxToFzM4hbH1rWYco8P3I08ujTxwY8u-eDGzVz6_fjydH3KvnTYR_r--p-w51_Xf65ui_vHm7ury_vCKilTUVawWq9rAIEocbXSpQZtVUe2QaKmFcpK25ACtcZWl20HqFay1rrN-5RWlifs53HuPvi_E8VkBpe36nscyU_RgK7rPFVW8DGqdA1lpasqo_qI2uBjDNSZfXADhoMBYeYIzM68RWDmCIzIErPH2asHRot9F3C0Lr53y6aqldAzd3HkKN_mn6NgonVzFq0LZJNpvfvI6j8QtJ_i</recordid><startdate>20140701</startdate><enddate>20140701</enddate><creator>Prall, C.</creator><creator>Ruebesam, M.</creator><creator>Weber, C.</creator><creator>Reufer, M.</creator><creator>Rueter, D.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>6I.</scope><scope>AAFTH</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20140701</creationdate><title>Photoluminescence from GaN layers at high temperatures as a candidate for in situ monitoring in MOVPE</title><author>Prall, C. ; Ruebesam, M. ; Weber, C. ; Reufer, M. ; Rueter, D.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c522t-3419bb7110aa2a9963616c5fec8aee8d05c2c8e515bad63df1a592766d0003c23</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>A1. Characterization</topic><topic>A2. Metalorganic vapor phase epitaxy</topic><topic>Applied sciences</topic><topic>B1. Nitrides</topic><topic>B3. Light emitting diodes</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Crystal growth</topic><topic>Electronics</topic><topic>Epitaxial growth</topic><topic>Exact sciences and technology</topic><topic>Gallium nitrides</topic><topic>Indium gallium nitrides</topic><topic>Low noise</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Monitoring</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Optoelectronic devices</topic><topic>Photoluminescence</topic><topic>Physics</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Spectra</topic><topic>Structure and morphology; thickness</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Thin film structure and morphology</topic><topic>Vapor phase epitaxy; growth from vapor phase</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Prall, C.</creatorcontrib><creatorcontrib>Ruebesam, M.</creatorcontrib><creatorcontrib>Weber, C.</creatorcontrib><creatorcontrib>Reufer, M.</creatorcontrib><creatorcontrib>Rueter, D.</creatorcontrib><collection>ScienceDirect Open Access Titles</collection><collection>Elsevier:ScienceDirect:Open Access</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Prall, C.</au><au>Ruebesam, M.</au><au>Weber, C.</au><au>Reufer, M.</au><au>Rueter, D.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Photoluminescence from GaN layers at high temperatures as a candidate for in situ monitoring in MOVPE</atitle><jtitle>Journal of crystal growth</jtitle><date>2014-07-01</date><risdate>2014</risdate><volume>397</volume><spage>24</spage><epage>28</epage><pages>24-28</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><coden>JCRGAE</coden><abstract>Efficient photoluminescence (PL) spectra from GaN and InGaN layers at temperatures up to 1100K are observed with low noise floor and high dynamic resolution. A number of detailed spectral features in the PL can be directly linked to physical properties of the epitaxial grown layer. The method is suggested as an in situ monitoring tool during epitaxy of nitride LED and laser structures. Layer properties like thickness, band gap or film temperature distribution are feasible.
•PL spectra from GaN at high temperatures typical for MOVPE GaN production.•Novelty: Dynamic PL signals well above the noise floor at 1100K from GaN and InGaN.•PL spectra provide information about temperature, thickness and band gap.•Lean optical setup to approach narrow MOVPE geometries in industrial production.•The method might become a useful tool for monitoring in LED production.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2014.04.001</doi><tpages>5</tpages><oa>free_for_read</oa></addata></record> |
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| subjects | A1. Characterization A2. Metalorganic vapor phase epitaxy Applied sciences B1. Nitrides B3. Light emitting diodes Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Crystal growth Electronics Epitaxial growth Exact sciences and technology Gallium nitrides Indium gallium nitrides Low noise Materials science Methods of deposition of films and coatings film growth and epitaxy Monitoring Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optoelectronic devices Photoluminescence Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Spectra Structure and morphology thickness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology Vapor phase epitaxy growth from vapor phase |
| title | Photoluminescence from GaN layers at high temperatures as a candidate for in situ monitoring in MOVPE |
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