Photoluminescence from GaN layers at high temperatures as a candidate for in situ monitoring in MOVPE

Efficient photoluminescence (PL) spectra from GaN and InGaN layers at temperatures up to 1100K are observed with low noise floor and high dynamic resolution. A number of detailed spectral features in the PL can be directly linked to physical properties of the epitaxial grown layer. The method is suggested as an in situ monitoring tool during epitaxy of nitride LED and laser structures. Layer properties like thickness, band gap or film temperature distribution are feasible. •PL spectra from GaN at high temperatures typical for MOVPE GaN production.•Novelty: Dynamic PL signals well above the noise floor at 1100K from GaN and InGaN.•PL spectra provide information about temperature, thickness and band gap.•Lean optical setup to approach narrow MOVPE geometries in industrial production.•The method might become a useful tool for monitoring in LED production.