Aperiodic SiSn/Si multilayers for thermoelectric applications

We report on novel defect-free SiSn/Si heterostructures grown pseudomorphically on Si(001) substrates using temperature-modulated molecular beam epitaxy. This approach results in a sustainable epitaxial growth for SiSn/Si multilayers. Transmission electron microscopy and electron diffraction manifes...

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Veröffentlicht in:	Journal of crystal growth 2014-04, Vol.392, p.49-51
Hauptverfasser:	Tonkikh, A.A., Zakharov, N.D., Eisenschmidt, C., Leipner, H.S., Werner, P.
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Thermoelectrics A3. Molecular beam epitaxy B1. Cubic SiSn B2. Semiconducting silicon Condensed matter: structure, mechanical and thermal properties Convergent-beam electron diffraction, selected-area electron diffraction, nanodiffraction Cross-disciplinary physics: materials science rheology Crystal growth Diamonds Diffraction Electron diffraction and scattering Epitaxial growth Exact sciences and technology Materials science Methods of crystal growth physics of crystal growth Methods of deposition of films and coatings film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy Multilayers Physics Silicon Silicon substrates Structure of solids and liquids crystallography Theory and models of crystal growth physics of crystal growth, crystal morphology and orientation Thermoelectricity
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Zusammenfassung:	We report on novel defect-free SiSn/Si heterostructures grown pseudomorphically on Si(001) substrates using temperature-modulated molecular beam epitaxy. This approach results in a sustainable epitaxial growth for SiSn/Si multilayers. Transmission electron microscopy and electron diffraction manifest that SiSn layers possess a diamond lattice structure. X-ray diffraction reveals up to 9.5 at% Sn in the crystal lattice of SiSn layers. •Novel promising thermoelectric material: cubic-phase SiSn/Si multilayers.•Pseudomorphic metastable SnSi thin alloys are epitaxially grown on Si(001).•Temperature-modulated molecular beam epitaxy is applied.
ISSN:	0022-0248 1873-5002
DOI:	10.1016/j.jcrysgro.2014.01.047