Effect of argon plasma-treated polyethylene terepthalate on ZnO:Al properties for flexible thin film silicon solar cells applications
The 0.4μm-thick Aluminum-doped Zinc Oxide (ZnO:Al) films were deposited at 100°C on polyethylene terephthalate (PET) substrates by Radio Frequency (RF) magnetron sputtering. Prior to the AZO deposition, an Argon plasma treatment on the substrate surface was carried out by applying a RF bias power on...
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Veröffentlicht in: | Solar energy materials and solar cells 2015-02, Vol.133, p.170-179 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The 0.4μm-thick Aluminum-doped Zinc Oxide (ZnO:Al) films were deposited at 100°C on polyethylene terephthalate (PET) substrates by Radio Frequency (RF) magnetron sputtering. Prior to the AZO deposition, an Argon plasma treatment on the substrate surface was carried out by applying a RF bias power on it without intentional heating. The parameters varied in the etching process were the plasma etching time from 0 to 360s, the RF bias power from 50 to 250W, and the gas flux from 3 to 5sccm. The effect of the substrate surface treatment on the mechanical stability, crystallinity and the optoelectronic properties of ZnO:Al thin films were evaluated. The results showed physically stable ZnO:Al films with good adherence to the substrate using appropriated plasma treatment parameters. This fact was attributed to physico/chemical PET surface modifications on the first few molecular layers after the plasma irradiation. The performance of flexible solar devices fabricated on optimized ZnO:Al thin films with adequate adhesion and optoelectronic properties was analysed.
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•Ar plasma treatment is used to modify the physical and chemical PET properties.•ZnO:Al films with good adhesion are obtained using soft Ar plasma conditions on PET.•ZnO:Al films show appropriated optoelectronic properties to be used in devices.•Thin film solar cells are fabricated on optimized ZnO:Al /treated flexible substrate.•Increases of 20% in efficiency and 13.6% in FF are achieved in optimized devices. |
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ISSN: | 0927-0248 1879-3398 |
DOI: | 10.1016/j.solmat.2014.10.030 |