Electronic Transport in Heterostructures of Chemical Vapor Deposited Graphene and Hexagonal Boron Nitride

CVD graphene devices on stacked CVD hexagonal boron nitride (hBN) are demonstrated using a novel low‐contamination transfer method, and their electrical performance is systematically compared to devices on SiO2. An order of magnitude improvement in mobility, sheet resistivity, current density, and s...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Small (Weinheim an der Bergstrasse, Germany) Germany), 2015-03, Vol.11 (12), p.1402-1408
Hauptverfasser:	Qi, Zhengqing John, Hong, Sung Ju, Rodríguez-Manzo, Julio A., Kybert, Nicholas J., Gudibande, Rajatesh, Drndić, Marija, Park, Yung Woo, Johnson, A. T. Charlie
Format:	Artikel
Sprache:	eng
Schlagworte:	Boron Compounds - chemistry Boron nitride Chemical vapor deposition Crystallization - methods current annealing Devices Electric Conductivity Electrical resistivity Electron Transport Electronics Gases - chemistry Graphene Graphite - chemistry heterostructures hexagonal boron nitride Nanoparticles - chemistry Nanoparticles - ultrastructure Nanotechnology Oxides Oxides - chemistry Particle Size substrate engineering Surface Properties Transport
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!