Electronic Transport in Heterostructures of Chemical Vapor Deposited Graphene and Hexagonal Boron Nitride

Electronic Transport in Heterostructures of Chemical Vapor Deposited Graphene and Hexagonal Boron Nitride

CVD graphene devices on stacked CVD hexagonal boron nitride (hBN) are demonstrated using a novel low‐contamination transfer method, and their electrical performance is systematically compared to devices on SiO2. An order of magnitude improvement in mobility, sheet resistivity, current density, and s...

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Veröffentlicht in:Small (Weinheim an der Bergstrasse, Germany) Germany), 2015-03, Vol.11 (12), p.1402-1408
Hauptverfasser: Qi, Zhengqing John, Hong, Sung Ju, Rodríguez-Manzo, Julio A., Kybert, Nicholas J., Gudibande, Rajatesh, Drndić, Marija, Park, Yung Woo, Johnson, A. T. Charlie
Format: Artikel
Sprache:eng
Schlagworte:
Boron Compounds - chemistry
Boron nitride
Chemical vapor deposition
Crystallization - methods
current annealing
Devices
Electric Conductivity
Electrical resistivity
Electron Transport
Electronics
Gases - chemistry
Graphene
Graphite - chemistry
heterostructures
hexagonal boron nitride
Nanoparticles - chemistry
Nanoparticles - ultrastructure
Nanotechnology
Oxides
Oxides - chemistry
Particle Size
substrate engineering
Surface Properties
Transport
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Zusammenfassung:CVD graphene devices on stacked CVD hexagonal boron nitride (hBN) are demonstrated using a novel low‐contamination transfer method, and their electrical performance is systematically compared to devices on SiO2. An order of magnitude improvement in mobility, sheet resistivity, current density, and sustained power is reported when the oxide substrate is covered with five‐layer CVD hBN.
ISSN:1613-6810
1613-6829
DOI:10.1002/smll.201402543