High Mobility and Low Density of Trap States in Dual-Solid-Gated PbS Nanocrystal Field-Effect Transistors

High Mobility and Low Density of Trap States in Dual-Solid-Gated PbS Nanocrystal Field-Effect Transistors

Dual‐gated PbS nanocrystal field‐effect transistors employing SiO2 and Cytop as gate dielectrics are fabricated. The obtained electron mobility (0.2 cm2 V−1 s−1) and the high on/off ratio (105–106), show that the controlled nanocrystal assembly (obtained with self‐assembled monolayers), as well as t...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Weinheim) 2015-03, Vol.27 (12), p.2107-2112
Hauptverfasser: Nugraha, Mohamad Insan, Häusermann, Roger, Bisri, Satria Zulkarnaen, Matsui, Hiroyuki, Sytnyk, Mykhailo, Heiss, Wolfgang, Takeya, Jun, Loi, Maria Antonietta
Format: Artikel
Sprache:eng
Schlagworte:
ambipolar transistors
Assembly
colloidal nanocrystals
Density
density of trap states
Dielectrics
Electron mobility
Field effect transistors
Gates
Nanocrystals
Semiconductor devices
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Dual‐gated PbS nanocrystal field‐effect transistors employing SiO2 and Cytop as gate dielectrics are fabricated. The obtained electron mobility (0.2 cm2 V−1 s−1) and the high on/off ratio (105–106), show that the controlled nanocrystal assembly (obtained with self‐assembled monolayers), as well as the trap density reduction (using Cytop as dielectric), are crucial steps for the future application of nanocrystals.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201404495