Growth of c-axis-oriented aluminum nitride thin films onto different substrates and buffer layers

The growth of aluminum nitride thin films onto various substrates (glass, flexible polyimide, or silicon) and onto different buffer layers (Au, Nb, Cu, Ag, Co, Fe, NiFe, or IrMn) is reported. Samples grown on IrMn, Co, NiFe, Nb, or Au show smooth surfaces. This same smooth quality is observed in sam...

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Veröffentlicht in:	Surface and interface analysis 2015-04, Vol.47 (4), p.447-453
Hauptverfasser:	Mori, T. J. A., Della Pace, R. D., de Andrade, A. M. H., Corrêa, M. A., Stamenov, P., Schelp, L. F., Dorneles, L. S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum nitride Glass Intermetallics Iron compounds Nickel base alloys Nickel compounds Niobium nitrides piezoelectric Silicon substrates synthetic multiferroics Thin films
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container_title	Surface and interface analysis
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creator	Mori, T. J. A. Della Pace, R. D. de Andrade, A. M. H. Corrêa, M. A. Stamenov, P. Schelp, L. F. Dorneles, L. S.
description	The growth of aluminum nitride thin films onto various substrates (glass, flexible polyimide, or silicon) and onto different buffer layers (Au, Nb, Cu, Ag, Co, Fe, NiFe, or IrMn) is reported. Samples grown on IrMn, Co, NiFe, Nb, or Au show smooth surfaces. This same smooth quality is observed in samples grown at a lower 200 °C temperature directly on glass, Si, or flexible polyimide. In applications where thin and smooth piezoelectric films are necessary, c‐axis‐oriented AlN can be grown onto a wide range of different surfaces: conducting, insulating, ferromagnetic, antiferromagnetic, or flexible. Copyright © 2014 John Wiley & Sons, Ltd.
doi_str_mv	10.1002/sia.5732
format	Article
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subjects	Aluminum nitride Glass Intermetallics Iron compounds Nickel base alloys Nickel compounds Niobium nitrides piezoelectric Silicon substrates synthetic multiferroics Thin films
title	Growth of c-axis-oriented aluminum nitride thin films onto different substrates and buffer layers
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