Growth of c-axis-oriented aluminum nitride thin films onto different substrates and buffer layers
The growth of aluminum nitride thin films onto various substrates (glass, flexible polyimide, or silicon) and onto different buffer layers (Au, Nb, Cu, Ag, Co, Fe, NiFe, or IrMn) is reported. Samples grown on IrMn, Co, NiFe, Nb, or Au show smooth surfaces. This same smooth quality is observed in sam...
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Veröffentlicht in: | Surface and interface analysis 2015-04, Vol.47 (4), p.447-453 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The growth of aluminum nitride thin films onto various substrates (glass, flexible polyimide, or silicon) and onto different buffer layers (Au, Nb, Cu, Ag, Co, Fe, NiFe, or IrMn) is reported. Samples grown on IrMn, Co, NiFe, Nb, or Au show smooth surfaces. This same smooth quality is observed in samples grown at a lower 200 °C temperature directly on glass, Si, or flexible polyimide. In applications where thin and smooth piezoelectric films are necessary, c‐axis‐oriented AlN can be grown onto a wide range of different surfaces: conducting, insulating, ferromagnetic, antiferromagnetic, or flexible. Copyright © 2014 John Wiley & Sons, Ltd. |
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ISSN: | 0142-2421 1096-9918 |
DOI: | 10.1002/sia.5732 |