GaP Homojunction LEDs Fabricated by Dressed-Photon-Phonon-Assisted Annealing

GaP Homojunction LEDs Fabricated by Dressed-Photon-Phonon-Assisted Annealing

By using a homojunction-structured GaP single crystal, we generated a photon energy higher than the bandgap energy (2.26 eV). The device was fabricated by performing dressed-photon-phonon- (DPP-) assisted annealing, while applying a forward-bias current, on a p-n homojunction structure formed by imp...

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Veröffentlicht in:Advances in optical technologies 2015, Vol.2015, p.1-8
Hauptverfasser: Kim, Jun Hyoung, Kawazoe, Tadashi, Ohtsu, Motoichi
Format: Artikel
Sprache:eng
Schlagworte:
Annealing
Devices
Dopants
Efficiency
Energy bands
Energy use
Homojunctions
Light emission
Light emitting diodes
Medical devices
Photons
R&D
Research & development
Semiconductors
Spectrum analysis
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Zusammenfassung:By using a homojunction-structured GaP single crystal, we generated a photon energy higher than the bandgap energy (2.26 eV). The device was fabricated by performing dressed-photon-phonon- (DPP-) assisted annealing, while applying a forward-bias current, on a p-n homojunction structure formed by implanting a dopant (Zn) into an n-type GaP substrate. The DPP-assisted annealing increased the light emission intensity in an energy band above 2.32 eV by at least 550% compared with that before annealing.
ISSN:1687-6393
1687-6407
DOI:10.1155/2015/236014