Effect of (LiCe) doping in (NaBi) sub(0.48)[ ] sub(0.04)Bi sub(2)Nb sub( 1.97)W sub(0.03)O sub(9) high-temperature ceramics

(LiCe)-modified (NaBi) sub(0.48)[ ] sub(0.04)Bi sub(2)Nb sub( 1.97)W sub(0.03)O sub(9) ceramics were prepared by conventional solid state sintering method, and the effect of doping on the electrical properties was studied. The dense microstructure with a high relative density [rho] sub(rd) (>98.12%) was well developed in this material system, presenting a typical Aurivillius phase structure. The Curie temperature (T sub(c)) gradually increases from 766 [degees]C to 776 [degrre]C with increasing (LiCe) content, and moreover the addition of (LiCe) significantly increases the piezoelectric constant (d sub(33)). The (NaBi) sub(0.43)(LiCe) sub(0.05)[ ] sub(0.04)Bi sub(2)Nb sub( 1.97)W sub(0.03)O sub(9) ceramics exhibit optimum electrical properties (e.g., d sub(33) ~ 26.1 pC/N, k sub(p) ~ 10.5%, and Q sub(p) ~ 3209), together with a relatively high T sub(c) (~771 [degrees]C) and good thermal stability until 750 [degrees]C. These results indicate that this ceramic is a promising candidate for high-temperature piezoelectric applications.