Fabrication and Evaluation of GaN Layer Composed of m- and {1011} Facet Structure

We grew a GaN layer on a -6.5°-off-angle n -plane patterned sapphire substrate (PSS) by selective-area growth from a sapphire sidewall. A uniform GaN layer with alternately arranged m - and {1011} facets on the surface was obtained on the PSS. Multiple quantum wells (MQWs) on the GaN template showed multicolor emission owing to their different structures. The peak wavelength of the MQWs on the {1011} facet of 440 nm was longer than that in the case of 405 nm on the m -facet.