Anomalous Enhancement of In-Diffusion of Plasma-Induced Defects in GaN upon Ultraviolet-Light Irradiation
We have shown that UV-light irradiation during plasma process anomalously enhances in-diffusion of the defects deactivating the Si donor in n-GaN. The region where the donor was deactivated by the plasma-induced defects became several times deeper upon the superimposed UV-light irradiation than that...
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Veröffentlicht in: | Japanese Journal of Applied Physics 2013-08, Vol.52 (8), p.088001-088001-3 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We have shown that UV-light irradiation during plasma process anomalously enhances in-diffusion of the defects deactivating the Si donor in n-GaN. The region where the donor was deactivated by the plasma-induced defects became several times deeper upon the superimposed UV-light irradiation than that in the sample just exposed to plasma emission. It was also found that external light with the below-band-gap energy did not affect the defect in-diffusion, and hence we can suggest that the electron--hole pair generation is essential for the enhancement of defect in-diffusion. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.7567/JJAP.52.088001 |