Silicon-Vacancy Color Centers in Nanodiamonds: Cathodoluminescence Imaging Markers in the Near Infrared

Silicon-Vacancy Color Centers in Nanodiamonds: Cathodoluminescence Imaging Markers in the Near Infrared

Nanodiamonds doped with silicon‐vacancy (Si‐V) color centers are shown to be a promising candidate for cathodoluminescence (CL) imaging at the nanoscale, providing bright, non‐bleaching, narrow‐linewidth emission at wavelengths within the near‐IR window of biological tissue. CL emission intensity fr...

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Veröffentlicht in:Small (Weinheim an der Bergstrasse, Germany) Germany), 2014-05, Vol.10 (10), p.1908-1913
Hauptverfasser: Zhang, Huiliang, Aharonovich, Igor, Glenn, David R., Schalek, Richard, Magyar, Andrew P., Lichtman, Jeff W., Hu, Evelyn L., Walsworth, Ronald L.
Format: Artikel
Sprache:eng
Schlagworte:
Cathodoluminescence
charge state
Color centers
correlated cathodoluminescence and secondary electron microscopy
Emission
Imaging
Infrared
Markers
nanodiamond
Nanostructure
Nanotechnology
Silicon vacancy (Si-V)
Wavelengths
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Zusammenfassung:Nanodiamonds doped with silicon‐vacancy (Si‐V) color centers are shown to be a promising candidate for cathodoluminescence (CL) imaging at the nanoscale, providing bright, non‐bleaching, narrow‐linewidth emission at wavelengths within the near‐IR window of biological tissue. CL emission intensity from negative charge‐state Si‐V centers is greatly enhanced by increasing the nitrogen concentration during nanodiamond growth.
ISSN:1613-6810
1613-6829
DOI:10.1002/smll.201303582