Ultrathin layer transfer technology for post-Si semiconductors

We have developed the transfer technology of thin post-silicon materials by utilizing high quality heteroepitaxial growth. The single crystal Germanium layer transfer with epitaxial lift-off (ELO) technique on arbitrary substrates has been demonstrated. We also present InGaAs-OI wafers by conventional bonding/etching technique and the low temperature fabrication of InGaAs nMOSFETs. Polyimide is newly implemented in InGaAs nMOSFET fabrication process as an adhesive and an insulating layer on Si.