Deuterium retention in the carbon co-deposition layers deposited by magnetron sputtering in D2/He atmosphere

Carbon was deposited on Si and W substrates using a D2/He plasma in a radio frequency magnetron sputtering system. The deposited layers were examined with ion beam analysis (IBA), Raman spectra analysis (RS) and scanning electron microscopy (SEM). The growth rate of the layers deposited at 2.5Pa total pressure and 300K decreased with increasing He fraction in the D2/He gas mixture. The deuterium concentration in the layers deposited on the Si substrate increased from 14% to 28% when the flow rate of the He gas relative to the D2 gas was varied from 0.125 to 0.5, but the deuterium concentration in the layers on a W substrate decreased from 24% to 14%. Deuterium or helium retention and the layer thickness all significantly decreased when the substrate temperature was increased from 423K to 773K. Raman analysis showed that the deposited layers were amorphous deuterated-carbon layers (named a-C: D layer) and the extent of bond disorder increased dramatically with the increasing helium content in the film. Blisters and bubbles occurred in the films for high helium content in the films, and surface cracking and exfoliation were also observed.