Influence of thermal treatment on the resistance switching of SrTiO3:Nb single crystal

•Thermal treatment increases interface state by improving the chemisorbed oxygen concentration on the surface.•Both electroforming and thermal treatment can generate trapping states.•Switching time is a close relationship with electrons trapping and detrapping at the interface.•Results analysis is useful for further comprehension of resistance switching mechanism. The influence of thermal treatment on the resistance switching of SrTiO3:Nb (0.05 and 0.5wt.% Nb) single crystals has been investigated. Analyzing current–voltage and capacitance–frequency curves of samples demonstrate that thermal treatment could increase interface state by improving the chemisorbed oxygen concentration on the surface. Switching time of Pt/SNTO junction with both the thermal treatment and the electroforming would be further shortened. The model of resistance switching effect is attributed to the trapping/detrapping electrons at the interface. These results above are useful for further comprehension of resistance switching mechanism.