Evolution of microstructure and opto-electrical properties in boron doped nc-Si:H films deposited by HW-CVD method

•Highly conducting boron doped p-type nc-Si:H films synthesized using HW-CVD without hydrogen.•Boron doping induces amorphization in nc-Si:H film structure.•Boron doping shifts hydrogen bonding in the films shifts from Si–H2 and (Si–H2)n complexes to Si–H.•Boron doping increases rms surface roughnes...

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Veröffentlicht in:	Journal of alloys and compounds 2014-02, Vol.585, p.523-528
Hauptverfasser:	Waman, V.S., Kamble, M.M., Ghosh, S.S., Mayabadi, A.H., Gabhale, B.B., Rondiya, S.R., Rokade, A.V., Khadtare, S.S., Sathe, V.G., Pathan, H.M., Gosavi, S.W., Jadkar, S.R.
Format:	Artikel
Sprache:	eng
Schlagworte:	Amorphization Boron Boron doping Chemical vapor deposition Condensed matter: electronic structure, electrical, magnetic, and optical properties Density Deposition Doping Electrical junctions Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport phenomena in thin films and low-dimensional structures Exact sciences and technology HW-CVD Low-field transport and mobility piezoresistance nc-Si:H Opto-electrical properties Photovoltaic cells Physics Raman spectroscopy Solar cells
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Beschreibung
Zusammenfassung:	•Highly conducting boron doped p-type nc-Si:H films synthesized using HW-CVD without hydrogen.•Boron doping induces amorphization in nc-Si:H film structure.•Boron doping shifts hydrogen bonding in the films shifts from Si–H2 and (Si–H2)n complexes to Si–H.•Boron doping increases rms surface roughness and micro-void density in the films.•Hydrogen content was found
ISSN:	0925-8388 1873-4669
DOI:	10.1016/j.jallcom.2013.09.172