On frequency response and stability of an optical front-end with variable-gain current amplifier using a bipolar junction transistor translinear loop
ABSTRACT A comparative analysis of implementations of an optical front–end with variable transimpedance intended for optical storage systems in two different BiCMOS technologies is given in this article. The variable‐gain current amplifier within the optical front–end is designed by using a modified...
Gespeichert in:
Veröffentlicht in: | International journal of circuit theory and applications 2013-08, Vol.41 (8), p.792-817 |
---|---|
Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | 817 |
---|---|
container_issue | 8 |
container_start_page | 792 |
container_title | International journal of circuit theory and applications |
container_volume | 41 |
creator | Tadić, Nikša Zogović, Milena Gaberl, Wolfgang Zimmermann, Horst |
description | ABSTRACT
A comparative analysis of implementations of an optical front–end with variable transimpedance intended for optical storage systems in two different BiCMOS technologies is given in this article. The variable‐gain current amplifier within the optical front–end is designed by using a modified balanced type of the bipolar junction transistors translinear loop. The predictions of the optical front–end mathematical models are confirmed by the measured results. They show that a 0.6‐µm BiCMOS silicon technology implementation with worse bipolar junction transistor parameters (unity‐gain frequency, current gain β, and the Early voltage) gives much better stability than a 0.35‐µm BiCMOS silicon‐germanium technology implementation. As a consequence, the useful measured transimpedance dynamic range of the proposed optical front–end is 17.5 times larger in the 0.6‐µm BiCMOS silicon technology than that in the 0.35‐µm BiCMOS silicon‐germanium technology. Copyright © 2012 John Wiley & Sons, Ltd.
A comparative analysis of implementations of an optical front–end with variable transimpedance in two different BiCMOS technologies is given. The variable‐gain current amplifier within the optical front–end is designed by using a modified balanced type of the bipolar junction transistors translinear loop. The useful measured transimpedance dynamic range of the proposed optical front–end is 17.5 times larger in the 0.6‐µm BiCMOS silicon technology than that in the 0.35‐µm BiCMOS silicon‐germanium technology because of the much better stability of the silicon implementation. |
doi_str_mv | 10.1002/cta.817 |
format | Article |
fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1671594129</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>3021069421</sourcerecordid><originalsourceid>FETCH-LOGICAL-c3937-1610219bfac409f293e16bbe1ae0d7ab7bb21b2e0a89477a82272addc0dcd9383</originalsourceid><addsrcrecordid>eNp10cGKFDEQBuAgCo6j-AoBDwrSa5Lu6STHZdZdhdEFWRlvoZJOrxkzSZuk3Z0H8X2NtHgQPKVIfRRF_Qg9p-SMEsLemAJngvIHaEWJ5A0h_MtDtCJEikYK0T9GT3I-EEIEa-UK_bwOeEz2-2yDOeFk8xRDthjCgHMB7bwrJxzH-oHjVJwBX3kMpbFV3LnyFf-A5EB729yCC9jMKdlQMBwn70ZnE56zC7cYsHZT9JDwYQ6muBhwSRCyyyWmpfQu2Nr3MU5P0aMRfLbP_rxr9Pny7c32XbO7vnq_Pd81ppUtb2hPCaNSj2A6IkcmW0t7rS0FSwYOmmvNqGaWgJAd5yAY4wyGwZDBDLIV7Rq9WuZOKdYT5KKOLhvrPQQb56xoz-lGdrROXqMX_9BDnFOo2ynaEdIx2ouuqpeLMinmnOyopuSOkE6KEvU7HlXjUTWeKl8v8s55e_ofU9ub80U3i673svd_NaRvquct36j9xyt10e32m_3FB_Wp_QWuNaMP</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1400421684</pqid></control><display><type>article</type><title>On frequency response and stability of an optical front-end with variable-gain current amplifier using a bipolar junction transistor translinear loop</title><source>Access via Wiley Online Library</source><creator>Tadić, Nikša ; Zogović, Milena ; Gaberl, Wolfgang ; Zimmermann, Horst</creator><creatorcontrib>Tadić, Nikša ; Zogović, Milena ; Gaberl, Wolfgang ; Zimmermann, Horst</creatorcontrib><description>ABSTRACT
A comparative analysis of implementations of an optical front–end with variable transimpedance intended for optical storage systems in two different BiCMOS technologies is given in this article. The variable‐gain current amplifier within the optical front–end is designed by using a modified balanced type of the bipolar junction transistors translinear loop. The predictions of the optical front–end mathematical models are confirmed by the measured results. They show that a 0.6‐µm BiCMOS silicon technology implementation with worse bipolar junction transistor parameters (unity‐gain frequency, current gain β, and the Early voltage) gives much better stability than a 0.35‐µm BiCMOS silicon‐germanium technology implementation. As a consequence, the useful measured transimpedance dynamic range of the proposed optical front–end is 17.5 times larger in the 0.6‐µm BiCMOS silicon technology than that in the 0.35‐µm BiCMOS silicon‐germanium technology. Copyright © 2012 John Wiley & Sons, Ltd.
A comparative analysis of implementations of an optical front–end with variable transimpedance in two different BiCMOS technologies is given. The variable‐gain current amplifier within the optical front–end is designed by using a modified balanced type of the bipolar junction transistors translinear loop. The useful measured transimpedance dynamic range of the proposed optical front–end is 17.5 times larger in the 0.6‐µm BiCMOS silicon technology than that in the 0.35‐µm BiCMOS silicon‐germanium technology because of the much better stability of the silicon implementation.</description><identifier>ISSN: 0098-9886</identifier><identifier>EISSN: 1097-007X</identifier><identifier>DOI: 10.1002/cta.817</identifier><identifier>CODEN: ICTACV</identifier><language>eng</language><publisher>Bognor Regis: Blackwell Publishing Ltd</publisher><subject>Balancing ; bipolar junction transistors ; Current amplifiers ; Dynamic range ; Junction transistors ; Mathematical models ; optical front-ends ; Semiconductor devices ; Silicon ; Stability ; translinear loops ; variable-gain current amplifiers</subject><ispartof>International journal of circuit theory and applications, 2013-08, Vol.41 (8), p.792-817</ispartof><rights>Copyright © 2012 John Wiley & Sons, Ltd.</rights><rights>Copyright © 2013 John Wiley & Sons, Ltd.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c3937-1610219bfac409f293e16bbe1ae0d7ab7bb21b2e0a89477a82272addc0dcd9383</citedby><cites>FETCH-LOGICAL-c3937-1610219bfac409f293e16bbe1ae0d7ab7bb21b2e0a89477a82272addc0dcd9383</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fcta.817$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fcta.817$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,780,784,1417,27924,27925,45574,45575</link.rule.ids></links><search><creatorcontrib>Tadić, Nikša</creatorcontrib><creatorcontrib>Zogović, Milena</creatorcontrib><creatorcontrib>Gaberl, Wolfgang</creatorcontrib><creatorcontrib>Zimmermann, Horst</creatorcontrib><title>On frequency response and stability of an optical front-end with variable-gain current amplifier using a bipolar junction transistor translinear loop</title><title>International journal of circuit theory and applications</title><addtitle>Int. J. Circ. Theor. Appl</addtitle><description>ABSTRACT
A comparative analysis of implementations of an optical front–end with variable transimpedance intended for optical storage systems in two different BiCMOS technologies is given in this article. The variable‐gain current amplifier within the optical front–end is designed by using a modified balanced type of the bipolar junction transistors translinear loop. The predictions of the optical front–end mathematical models are confirmed by the measured results. They show that a 0.6‐µm BiCMOS silicon technology implementation with worse bipolar junction transistor parameters (unity‐gain frequency, current gain β, and the Early voltage) gives much better stability than a 0.35‐µm BiCMOS silicon‐germanium technology implementation. As a consequence, the useful measured transimpedance dynamic range of the proposed optical front–end is 17.5 times larger in the 0.6‐µm BiCMOS silicon technology than that in the 0.35‐µm BiCMOS silicon‐germanium technology. Copyright © 2012 John Wiley & Sons, Ltd.
A comparative analysis of implementations of an optical front–end with variable transimpedance in two different BiCMOS technologies is given. The variable‐gain current amplifier within the optical front–end is designed by using a modified balanced type of the bipolar junction transistors translinear loop. The useful measured transimpedance dynamic range of the proposed optical front–end is 17.5 times larger in the 0.6‐µm BiCMOS silicon technology than that in the 0.35‐µm BiCMOS silicon‐germanium technology because of the much better stability of the silicon implementation.</description><subject>Balancing</subject><subject>bipolar junction transistors</subject><subject>Current amplifiers</subject><subject>Dynamic range</subject><subject>Junction transistors</subject><subject>Mathematical models</subject><subject>optical front-ends</subject><subject>Semiconductor devices</subject><subject>Silicon</subject><subject>Stability</subject><subject>translinear loops</subject><subject>variable-gain current amplifiers</subject><issn>0098-9886</issn><issn>1097-007X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNp10cGKFDEQBuAgCo6j-AoBDwrSa5Lu6STHZdZdhdEFWRlvoZJOrxkzSZuk3Z0H8X2NtHgQPKVIfRRF_Qg9p-SMEsLemAJngvIHaEWJ5A0h_MtDtCJEikYK0T9GT3I-EEIEa-UK_bwOeEz2-2yDOeFk8xRDthjCgHMB7bwrJxzH-oHjVJwBX3kMpbFV3LnyFf-A5EB729yCC9jMKdlQMBwn70ZnE56zC7cYsHZT9JDwYQ6muBhwSRCyyyWmpfQu2Nr3MU5P0aMRfLbP_rxr9Pny7c32XbO7vnq_Pd81ppUtb2hPCaNSj2A6IkcmW0t7rS0FSwYOmmvNqGaWgJAd5yAY4wyGwZDBDLIV7Rq9WuZOKdYT5KKOLhvrPQQb56xoz-lGdrROXqMX_9BDnFOo2ynaEdIx2ouuqpeLMinmnOyopuSOkE6KEvU7HlXjUTWeKl8v8s55e_ofU9ub80U3i673svd_NaRvquct36j9xyt10e32m_3FB_Wp_QWuNaMP</recordid><startdate>201308</startdate><enddate>201308</enddate><creator>Tadić, Nikša</creator><creator>Zogović, Milena</creator><creator>Gaberl, Wolfgang</creator><creator>Zimmermann, Horst</creator><general>Blackwell Publishing Ltd</general><general>Wiley Subscription Services, Inc</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>201308</creationdate><title>On frequency response and stability of an optical front-end with variable-gain current amplifier using a bipolar junction transistor translinear loop</title><author>Tadić, Nikša ; Zogović, Milena ; Gaberl, Wolfgang ; Zimmermann, Horst</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3937-1610219bfac409f293e16bbe1ae0d7ab7bb21b2e0a89477a82272addc0dcd9383</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Balancing</topic><topic>bipolar junction transistors</topic><topic>Current amplifiers</topic><topic>Dynamic range</topic><topic>Junction transistors</topic><topic>Mathematical models</topic><topic>optical front-ends</topic><topic>Semiconductor devices</topic><topic>Silicon</topic><topic>Stability</topic><topic>translinear loops</topic><topic>variable-gain current amplifiers</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tadić, Nikša</creatorcontrib><creatorcontrib>Zogović, Milena</creatorcontrib><creatorcontrib>Gaberl, Wolfgang</creatorcontrib><creatorcontrib>Zimmermann, Horst</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>International journal of circuit theory and applications</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tadić, Nikša</au><au>Zogović, Milena</au><au>Gaberl, Wolfgang</au><au>Zimmermann, Horst</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>On frequency response and stability of an optical front-end with variable-gain current amplifier using a bipolar junction transistor translinear loop</atitle><jtitle>International journal of circuit theory and applications</jtitle><addtitle>Int. J. Circ. Theor. Appl</addtitle><date>2013-08</date><risdate>2013</risdate><volume>41</volume><issue>8</issue><spage>792</spage><epage>817</epage><pages>792-817</pages><issn>0098-9886</issn><eissn>1097-007X</eissn><coden>ICTACV</coden><abstract>ABSTRACT
A comparative analysis of implementations of an optical front–end with variable transimpedance intended for optical storage systems in two different BiCMOS technologies is given in this article. The variable‐gain current amplifier within the optical front–end is designed by using a modified balanced type of the bipolar junction transistors translinear loop. The predictions of the optical front–end mathematical models are confirmed by the measured results. They show that a 0.6‐µm BiCMOS silicon technology implementation with worse bipolar junction transistor parameters (unity‐gain frequency, current gain β, and the Early voltage) gives much better stability than a 0.35‐µm BiCMOS silicon‐germanium technology implementation. As a consequence, the useful measured transimpedance dynamic range of the proposed optical front–end is 17.5 times larger in the 0.6‐µm BiCMOS silicon technology than that in the 0.35‐µm BiCMOS silicon‐germanium technology. Copyright © 2012 John Wiley & Sons, Ltd.
A comparative analysis of implementations of an optical front–end with variable transimpedance in two different BiCMOS technologies is given. The variable‐gain current amplifier within the optical front–end is designed by using a modified balanced type of the bipolar junction transistors translinear loop. The useful measured transimpedance dynamic range of the proposed optical front–end is 17.5 times larger in the 0.6‐µm BiCMOS silicon technology than that in the 0.35‐µm BiCMOS silicon‐germanium technology because of the much better stability of the silicon implementation.</abstract><cop>Bognor Regis</cop><pub>Blackwell Publishing Ltd</pub><doi>10.1002/cta.817</doi><tpages>26</tpages></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0098-9886 |
ispartof | International journal of circuit theory and applications, 2013-08, Vol.41 (8), p.792-817 |
issn | 0098-9886 1097-007X |
language | eng |
recordid | cdi_proquest_miscellaneous_1671594129 |
source | Access via Wiley Online Library |
subjects | Balancing bipolar junction transistors Current amplifiers Dynamic range Junction transistors Mathematical models optical front-ends Semiconductor devices Silicon Stability translinear loops variable-gain current amplifiers |
title | On frequency response and stability of an optical front-end with variable-gain current amplifier using a bipolar junction transistor translinear loop |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-23T10%3A09%3A59IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=On%20frequency%20response%20and%20stability%20of%20an%20optical%20front-end%20with%20variable-gain%20current%20amplifier%20using%20a%20bipolar%20junction%20transistor%20translinear%20loop&rft.jtitle=International%20journal%20of%20circuit%20theory%20and%20applications&rft.au=Tadi%C4%87,%20Nik%C5%A1a&rft.date=2013-08&rft.volume=41&rft.issue=8&rft.spage=792&rft.epage=817&rft.pages=792-817&rft.issn=0098-9886&rft.eissn=1097-007X&rft.coden=ICTACV&rft_id=info:doi/10.1002/cta.817&rft_dat=%3Cproquest_cross%3E3021069421%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1400421684&rft_id=info:pmid/&rfr_iscdi=true |