Enhanced Thermoelectric Properties of Pb-doped BiCuSeO Ceramics

A high‐performance thermoelectric oxyselenide BiCuSeO ceramic with ZT > 1.1 at 823 K and higher average ZT value (ZTave ≈0.8) is obtained. The heavy doping element and nanostructures can effectively tune its electronic structure, hole concentration, and thermal conductivity, resulting in substant...

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Veröffentlicht in:Advanced materials (Weinheim) 2013-09, Vol.25 (36), p.5086-5090
Hauptverfasser: Lan, Jin-Le, Liu, Yao-Chun, Zhan, Bin, Lin, Yuan-Hua, Zhang, Boping, Yuan, Xun, Zhang, Wenqing, Xu, Wei, Nan, C.-W.
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Sprache:eng
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Zusammenfassung:A high‐performance thermoelectric oxyselenide BiCuSeO ceramic with ZT > 1.1 at 823 K and higher average ZT value (ZTave ≈0.8) is obtained. The heavy doping element and nanostructures can effectively tune its electronic structure, hole concentration, and thermal conductivity, resulting in substantially enhanced mobility, power factor, and thus ZT value. This work provides a path to high‐performance thermoelectric ceramics.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201301675