Recombination dynamics and internal quantum efficiency in InGaN

Recombination dynamics and internal quantum efficiency (IQE) of green luminescent InGaN nanowires with different crystalline qualities have been studied by means photoluminescence (PL) and time‐resolved PL spectroscopy. Temperature‐ and excitation‐power‐density‐dependent PL spectroscopy enabled to evaluate the IQE as a function of excitation power density. The shape of the efficiency curves at low temperature strongly depended on the magnitude of nonradiative recombination processes. This leads to the misestimation of the IQE in the lower quality nanowire. In addition, the PL decay curves were well described by a double exponential function both at 6 and 300 K. The PL decay time of the faster component was affected by nonradiative recombination processes even at low temperature. This indicated that the radiative recombination lifetime cannot be estimated from the PL decay time in the lower quality nanowire. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)