Thermoelectric Properties of Al Doped ZnO Thin Films

Significant progress has been made in thermoelectric materials during the last decades and it is found that thermoelectric thin film materials have high thermoelectric conversion efficiency. ZnO based thermoelectric materials, such as ZnO:Al (AZO), are considered as the most promising oxide material...

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Veröffentlicht in:Materials science forum 2013-01, Vol.743-744, p.138-143
Hauptverfasser: Liang, Guang Xing, Cao, Peng Ju, Zheng, Zhuang Hao, Ou, Xuan, Fan, Ping, Zhang, Dong Ping, Lai, Cui Yuan, Liu, Peng Juan, Cai, Zhao Kun
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Sprache:eng
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Zusammenfassung:Significant progress has been made in thermoelectric materials during the last decades and it is found that thermoelectric thin film materials have high thermoelectric conversion efficiency. ZnO based thermoelectric materials, such as ZnO:Al (AZO), are considered as the most promising oxide materials for high-temperature, nontoxic and low-cost thermoelectric application. In this work, the effects of annealing temperature on the thermoelectric properties of AZO thin films prepared by direct current magnetron sputtering were investigated. The results indicate that the Seebeck coefficient of AZO thin films increases and the resistivity decreases as increasing of annealing temperature. Among the prepared AZO films in this work, the maximum absolute value of Seebeck coefficient is 460 μV/K and the minimum resistivity is 3.25×10-4 Ω·m. The sample annealed at 773 K has a maximum power factor value of 1.46×10-4 W/mK2 at 620 K with a moderate Seebeck coefficient of-355 μV/K and a electrical conductivity of 1.16×103 S/m.
ISSN:0255-5476
1662-9752
1662-9752
DOI:10.4028/www.scientific.net/MSF.743-744.138