32 × 32 Crossbar Array Resistive Memory Composed of a Stacked Schottky Diode and Unipolar Resistive Memory

Various array types of 1‐diode and 1‐resistor stacked crossbar array (1D1R CA) devices composed of a Schottky diode (SD) (Pt/TiO2/Ti/Pt) and a resistive switching (RS) memory cell (Pt/TiO2/Pt) are fabricated and their performances are investigated. The unit cell of the 1D1R CA device shows high RS r...

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Veröffentlicht in:	Advanced functional materials 2013-03, Vol.23 (11), p.1440-1449
Hauptverfasser:	Kim, Gun Hwan, Lee, Jong Ho, Ahn, Youngbae, Jeon, Woojin, Song, Seul Ji, Seok, Jun Yeong, Yoon, Jung Ho, Yoon, Kyung Jean, Park, Tae Joo, Hwang, Cheol Seong
Format:	Artikel
Sprache:	eng
Schlagworte:	Arrays crossbar arrays Devices Platinum Schottky diodes Schottky-type diodes Switching Titanium Titanium dioxide unipolar resistive switching Unit cell
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Zusammenfassung:	Various array types of 1‐diode and 1‐resistor stacked crossbar array (1D1R CA) devices composed of a Schottky diode (SD) (Pt/TiO2/Ti/Pt) and a resistive switching (RS) memory cell (Pt/TiO2/Pt) are fabricated and their performances are investigated. The unit cell of the 1D1R CA device shows high RS resistance ratio (≈103 at 1.5 V) between low and high resistance state (LRS and HRS), and high rectification ratio (≈105) between LRS and reverse‐state SD. It also shows a short RS time of
ISSN:	1616-301X 1616-3028
DOI:	10.1002/adfm.201202170