Optical Characterization of Compensating Defects in Cubic SiC

We present investigation of carrier recombination and optical trap recharge in sublimation grown n- and p-type 3C layers by using time-resolved nonlinear optical techniques. Carrier lifetime and recharged trap recovery were measured by differential transmittivity technique. By monitoring nonequilibr...

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Veröffentlicht in:Materials science forum 2013-01, Vol.740-742, p.401-404
Hauptverfasser: Ščajev, Patrik, Jarašiūnas, K., Abramov, P.L., Lebedev, S.P., Lebedev, Alexander A.
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Sprache:eng
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Zusammenfassung:We present investigation of carrier recombination and optical trap recharge in sublimation grown n- and p-type 3C layers by using time-resolved nonlinear optical techniques. Carrier lifetime and recharged trap recovery were measured by differential transmittivity technique. By monitoring nonequilibrium carrier dynamics, we analyzed impact of carrier density and temperature on carrier lifetime and recharged trap recovery rate. Large carrier lifetime and small diffusivity at low injections in highly compensated samples and their dependences on injection were explained by optical recharge of compensating aluminum impurities. The complete recharge of the compensating impurities by optical means allowed us to calculate the compensating aluminum density in n-type samples and compensating nitrogen in p-type ones.
ISSN:0255-5476
1662-9752
1662-9752
DOI:10.4028/www.scientific.net/MSF.740-742.401