Upgraded Silicon Nanowires by Metal-Assisted Etching of Metallurgical Silicon: A New Route to Nanostructured Solar-Grade Silicon

Through metal‐assisted chemical etching (MaCE), superior purification of dirty Si is observed, from 99.74 to 99.9884% for metallurgical Si and from 99.999772 to 99.999899% for upgraded metallurgical Si. In addition, large area of silicon nanowires (SiNW) are fabricated. The purification effect induc...

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Veröffentlicht in:	Advanced materials (Weinheim) 2013-06, Vol.25 (23), p.3187-3191
Hauptverfasser:	Li, Xiaopeng, Xiao, Yanjun, Bang, Jin Ho, Lausch, Dominik, Meyer, Sylke, Miclea, Paul-Tiberiu, Jung, Jin-Young, Schweizer, Stefan L., Lee, Jung-Ho, Wehrspohn, Ralf B.
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical etching Electrodes Etching Hydrogen - chemistry metal assisted chemical etching metal impurities metallurgical silicon Metallurgy Nanostructure Nanowires Nanowires - chemistry Nanowires - ultrastructure Photocurrent photoelectrochemical cell Porosity Purification Silicon Silicon - chemistry silicon nanowire Solar Energy Surface Properties
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Zusammenfassung:	Through metal‐assisted chemical etching (MaCE), superior purification of dirty Si is observed, from 99.74 to 99.9884% for metallurgical Si and from 99.999772 to 99.999899% for upgraded metallurgical Si. In addition, large area of silicon nanowires (SiNW) are fabricated. The purification effect induces a ∼35% increase in photocurrent for SiNW based photoelectrochemical cell.
ISSN:	0935-9648 1521-4095
DOI:	10.1002/adma.201300973