X-Ray Diffraction and Raman Spectroscopy Study of Strain in Graphene Films Grown on GH-SiC(0001) Using Propane-Hydrogen-Argon CVD

X-Ray Diffraction and Raman Spectroscopy Study of Strain in Graphene Films Grown on GH-SiC(0001) Using Propane-Hydrogen-Argon CVD

We have grown graphene films on 6H-SiC(0001) using propane CVD and evidenced the strong impact of the hydrogen/argon mixture used as the carrier gas on the graphene/SiC interface and on the orientation of graphene layers. By studying a set of samples grown with different hydrogen/argon mixture using...

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Veröffentlicht in:Materials science forum 2013-01, Vol.740-742, p.117-120
Hauptverfasser: Michon, Adrien, Largeau, Ludovic, Tiberj, Antoine, Huntzinger, Jean Roch, Mauguin, Olivia, Vezian, Stephane, Lefebvre, Denis, Cheynis, Fabien, Leroy, Frederic, Muller, Pierre, Chassagne, Thierry, Zielinski, Marcin, Portail, Marc
Format: Artikel
Sprache:eng
Schlagworte:
Argon
Diffraction
Graphene
Graphical user interface
Raman spectroscopy
Silicon carbide
Strain
X-rays
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Zusammenfassung:We have grown graphene films on 6H-SiC(0001) using propane CVD and evidenced the strong impact of the hydrogen/argon mixture used as the carrier gas on the graphene/SiC interface and on the orientation of graphene layers. By studying a set of samples grown with different hydrogen/argon mixture using Raman spectroscopy and grazing incidence X-ray diffraction, we evidence the links between graphene/SiC interface and strain in graphene.
ISSN:0255-5476
DOI:10.4028/www.scientific.net/MSF.740-742.117