Growth of Zinc Oxide Nanostructures on Electrochemically-Etched p-Type Silicon(100) Substrate by Chemical Bath Deposition Method

ZnO nanostructures were successfully grown on electrochemically etched p-type Si (100) substrate via chemical bath deposition method under basic solution. These nanostructures are characterized through scanning electron microscopy – energy dispersive X-ray spectroscopy (SEM-EDS) and ultraviolet-visible spectroscopy (UV-Vis). SEM results revealed that the density of the ZnO nanorods can be controlled by changing the surface morphology of the substrate via electrochemical etching process. At around 200-400 nm, the reflectance intensity of ZnO is significantly decreased as the density of the nanorods increases. Discussion on the possible growth mechanism of ZnO on etched Si during deposition is also presented.