Chalcogenides for thin film NO sensors

Study of Te 13Ge x -based binary, ternary and quaternary alloys of Te, Ge, Se, As, Mg, I and S was performed in order to find appropriate material compositions for use in future gas sensors working at room temperature. Although most of the investigated alloys showed a linear correlation between the NO concentration and the sensor current at constant voltage, the alloys’ composition was found to have a large influence on the NO sensitivity and the signal/noise ratio. In particular, the integration of As and Mg reduces the NO sensing properties, if compared to S or I containing Te 13Ge x films. Among the alloys tested, two promising candidates for future gas sensors, Te 13Ge 3S 3 and Te 13Ge 3, have been found.