Preparation of indium selenide thin film by electrochemical technique

Indium Selenide (In x Se y ) layers were potentiostatically deposited on glass/fluorine-doped tin oxide (FTO) substrates, using electro-chemical technique from aqueous solution containing 0.10 M InCl 3 and 0.02 M SeO 2 . The electrodeposits were characterised using a wide range of analytical techniques; X-ray diffraction (XRD), scanning electron microscopy (SEM), Atomic force microscopy (AFM), optical absorption and photoelectrochemical (PEC) cell, for their structural, morphological, optical and electrical properties. The XRD show that the prepared films consist of mixed phases of InSe and In 2 Se 3 . The films grown at all voltages in this work were p type in electrical conduction, with bandgaps in the range of (1.70–1.80) eV in both as-deposited and heat-treated forms. The wetting property of In x Se y on glass/FTO surfaces indicates that In x Se y layers can be helpful as buffer layers or window layers in thin film solar cell development due to their ability to uniformly cover the substrate. The cross-section morphology show smoothening effect of these layers. The experimental results to date are presented in this paper.