Photoluminescence at up to 2.4 [mu]m wavelengths from GaInAsBi/AlInAs quantum wells

5 nm, 10 nm and 20 nm-thick GaInAsBi quantum wells were grown on the InP:Fe(100) substrates by molecular beam epitaxy. The top and bottom barriers of quantum structures were 50 nm and 100 nm-thick lattice-matched AlInAs, respectively. Quantum wells were grown at the substrate temperature of about 240 [degrees]C. The maximum bismuth content in the wells was 5.0%. Transmission electron microscopy images revealed sharp interfaces between the wells and barrier layers as well as homogeneous Bi incorporation. Photoluminescence (PL) measurements demonstrated signals from all QW up to the room temperature. PL intensity was stronger in thinner quantum wells where relaxation and clustering effects were avoided. The longest emission wavelength registered reached 2.4 [mu]m.