Vanadium bound exciton luminescence in 6H-SiC

Vanadium bound exciton luminescence in 6H-SiC

The source responsible for V2 (1.398 eV) luminescence in 6H-SiC is recognized as a favorable defect for quantum information processing. However, the origin of V2 luminescence is still controversial. With careful photoluminescence measurements, it is found that V2 line shows clear bound exciton lumin...

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Veröffentlicht in:Applied physics letters 2012-10, Vol.101 (15)
Hauptverfasser: Wang, S. C., Wang, G., Liu, Y., Jiang, L. B., Wang, W. J., Chen, X. L.
Format: Artikel
Sprache:eng
Schlagworte:
Data processing
Excitation
Luminescence
Origins
Qubits (quantum computing)
Recognition
Silicon carbide
Vanadium
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Zusammenfassung:The source responsible for V2 (1.398 eV) luminescence in 6H-SiC is recognized as a favorable defect for quantum information processing. However, the origin of V2 luminescence is still controversial. With careful photoluminescence measurements, it is found that V2 line shows clear bound exciton luminescence features. Furthermore, a mechanism based on neutral vanadium donor bound exciton is put forward to explain the origin of V2 luminescence. The results may provide some insights to understanding the nature of the promising qubit candidates in SiC.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4757883