hbox ZrO 2 -Based Memory Cell With a Self-Rectifying Effect for Crossbar WORM Memory Application

A memory cell based on hbox n + - hbox Si / ZrO 2 / hbox Pt structure with self-rectifying properties is demonstrated for write-once-read-many-times (WORM) memory application. The fresh devices can be set to a low resistance state (LRS) as an antifuse and keep in LRS permanently with a rectification ratio exceeding hbox 10 4 . The memory devices show a large on/off ratio of about hbox 10 6 and narrow resistance distributions before and after programming. The different transport mechanisms of forward and reverse currents are studied, which are responsible for this reliable self-rectifying characteristic. The demonstrated memory cell with self-rectifying properties has potential application in high-density passive crossbar WORM memory.