19% Efficient Thin-Film Crystalline Silicon Solar Cells From Layer Transfer Using Porous Silicon: A Loss Analysis by Means of Three-Dimensional Simulations
We present a study about loss analysis in both-sides-contacted silicon solar cells from a porous silicon (PSI) layer transfer process. Experimental results achieved by a variation of the rear-side contact geometry are characterized by different techniques such as electroluminescence and quantum effi...
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| Veröffentlicht in: | IEEE transactions on electron devices 2012-04, Vol.59 (4), p.909-917 |
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| container_title | IEEE transactions on electron devices |
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| creator | Petermann, J. H. Ohrdes, T. Altermatt, P. P. Eidelloth, S. Brendel, R. |
| description | We present a study about loss analysis in both-sides-contacted silicon solar cells from a porous silicon (PSI) layer transfer process. Experimental results achieved by a variation of the rear-side contact geometry are characterized by different techniques such as electroluminescence and quantum efficiency measurements and reproduced by 3-D simulations using Sentaurus Device. Since such a device simulation does not include resistive losses in the metallization, we use a network simulation to account for losses caused by the grid. Considering the optimal contact geometry, the simulations indicate the power losses in the emitter, at the rear-side contacts, in the base, and in the metallization grid to be in the same order of magnitude. |
| doi_str_mv | 10.1109/TED.2012.2183001 |
| format | Article |
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H. ; Ohrdes, T. ; Altermatt, P. P. ; Eidelloth, S. ; Brendel, R.</creator><creatorcontrib>Petermann, J. H. ; Ohrdes, T. ; Altermatt, P. P. ; Eidelloth, S. ; Brendel, R.</creatorcontrib><description>We present a study about loss analysis in both-sides-contacted silicon solar cells from a porous silicon (PSI) layer transfer process. Experimental results achieved by a variation of the rear-side contact geometry are characterized by different techniques such as electroluminescence and quantum efficiency measurements and reproduced by 3-D simulations using Sentaurus Device. Since such a device simulation does not include resistive losses in the metallization, we use a network simulation to account for losses caused by the grid. Considering the optimal contact geometry, the simulations indicate the power losses in the emitter, at the rear-side contacts, in the base, and in the metallization grid to be in the same order of magnitude.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2012.2183001</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Conductivity ; Contact ; Cross-disciplinary physics: materials science; rheology ; Devices ; Electronics ; Energy ; Exact sciences and technology ; Kerfless ; layer transfer ; loss analysis ; Materials science ; Metallization ; Microelectronic fabrication (materials and surfaces technology) ; Natural energy ; Optoelectronic devices ; Photovoltaic cells ; Photovoltaic conversion ; Physics ; Porous materials; granular materials ; Porous silicon ; porous silicon (PSI) ; Resistance ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Silicon ; Simulation ; Solar cells ; Solar cells. Photoelectrochemical cells ; Solar energy ; Solid modeling ; Specific materials ; Surface treatment ; Thin films ; Three dimensional</subject><ispartof>IEEE transactions on electron devices, 2012-04, Vol.59 (4), p.909-917</ispartof><rights>2015 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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Considering the optimal contact geometry, the simulations indicate the power losses in the emitter, at the rear-side contacts, in the base, and in the metallization grid to be in the same order of magnitude.</description><subject>Applied sciences</subject><subject>Conductivity</subject><subject>Contact</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Devices</subject><subject>Electronics</subject><subject>Energy</subject><subject>Exact sciences and technology</subject><subject>Kerfless</subject><subject>layer transfer</subject><subject>loss analysis</subject><subject>Materials science</subject><subject>Metallization</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>Natural energy</subject><subject>Optoelectronic devices</subject><subject>Photovoltaic cells</subject><subject>Photovoltaic conversion</subject><subject>Physics</subject><subject>Porous materials; granular materials</subject><subject>Porous silicon</subject><subject>porous silicon (PSI)</subject><subject>Resistance</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Silicon</subject><subject>Simulation</subject><subject>Solar cells</subject><subject>Solar cells. Photoelectrochemical cells</subject><subject>Solar energy</subject><subject>Solid modeling</subject><subject>Specific materials</subject><subject>Surface treatment</subject><subject>Thin films</subject><subject>Three dimensional</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqFkU-P0zAQxSMEEmXhjsTFQlqJS4r_xbW5Vd2WRSoCacM5cp0xeOXEiyc95LPwZXHV7h64cLLH_r03mnlV9ZbRJWPUfGy3N0tOGV9ypgWl7Fm1YE2zqo2S6nm1KC-6NkKLl9UrxPtSKin5ovrDzDXZeh9cgHEi7a8w1rsQB7LJM042xjACuQsxuDSSuxRtJhuIEckup4Hs7QyZtNmO6MvlB4bxJ_mecjrio-gTWZN9QiTr0cYZA5LDTL5CUZDkS78MUN-EAUYMqRBFNhyjnUqBr6sX3kaEN5fzqmp323ZzW--_ff6yWe9rJ7SaaiHANj2wlZW-MT1nvTDOc82FahqhXS9AMSX0QSt34NRbLftecmGEkgcO4qr6cLZ9yOn3EXDqhoCuDGlHKIN0TK2YNGW34v8oZaY0NeKEvv8HvU_HXCbEzkhqRCPlCaJnyOWyogy-e8hhsHkuTt0p1q7E2p1i7S6xFsn1xdeis9GX3buATzquKGtWuincuzMXAODpWzGpJFuJv0TKqhk</recordid><startdate>20120401</startdate><enddate>20120401</enddate><creator>Petermann, J. 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P.</au><au>Eidelloth, S.</au><au>Brendel, R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>19% Efficient Thin-Film Crystalline Silicon Solar Cells From Layer Transfer Using Porous Silicon: A Loss Analysis by Means of Three-Dimensional Simulations</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2012-04-01</date><risdate>2012</risdate><volume>59</volume><issue>4</issue><spage>909</spage><epage>917</epage><pages>909-917</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>We present a study about loss analysis in both-sides-contacted silicon solar cells from a porous silicon (PSI) layer transfer process. Experimental results achieved by a variation of the rear-side contact geometry are characterized by different techniques such as electroluminescence and quantum efficiency measurements and reproduced by 3-D simulations using Sentaurus Device. Since such a device simulation does not include resistive losses in the metallization, we use a network simulation to account for losses caused by the grid. Considering the optimal contact geometry, the simulations indicate the power losses in the emitter, at the rear-side contacts, in the base, and in the metallization grid to be in the same order of magnitude.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2012.2183001</doi><tpages>9</tpages></addata></record> |
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| subjects | Applied sciences Conductivity Contact Cross-disciplinary physics: materials science rheology Devices Electronics Energy Exact sciences and technology Kerfless layer transfer loss analysis Materials science Metallization Microelectronic fabrication (materials and surfaces technology) Natural energy Optoelectronic devices Photovoltaic cells Photovoltaic conversion Physics Porous materials granular materials Porous silicon porous silicon (PSI) Resistance Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Simulation Solar cells Solar cells. Photoelectrochemical cells Solar energy Solid modeling Specific materials Surface treatment Thin films Three dimensional |
| title | 19% Efficient Thin-Film Crystalline Silicon Solar Cells From Layer Transfer Using Porous Silicon: A Loss Analysis by Means of Three-Dimensional Simulations |
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