19% Efficient Thin-Film Crystalline Silicon Solar Cells From Layer Transfer Using Porous Silicon: A Loss Analysis by Means of Three-Dimensional Simulations
We present a study about loss analysis in both-sides-contacted silicon solar cells from a porous silicon (PSI) layer transfer process. Experimental results achieved by a variation of the rear-side contact geometry are characterized by different techniques such as electroluminescence and quantum effi...
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Veröffentlicht in: | IEEE transactions on electron devices 2012-04, Vol.59 (4), p.909-917 |
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Sprache: | eng |
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Zusammenfassung: | We present a study about loss analysis in both-sides-contacted silicon solar cells from a porous silicon (PSI) layer transfer process. Experimental results achieved by a variation of the rear-side contact geometry are characterized by different techniques such as electroluminescence and quantum efficiency measurements and reproduced by 3-D simulations using Sentaurus Device. Since such a device simulation does not include resistive losses in the metallization, we use a network simulation to account for losses caused by the grid. Considering the optimal contact geometry, the simulations indicate the power losses in the emitter, at the rear-side contacts, in the base, and in the metallization grid to be in the same order of magnitude. |
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ISSN: | 0018-9383 1557-9646 |
DOI: | 10.1109/TED.2012.2183001 |