Photoluminescence under high-electric field of PbS quantum dots

The effect of a laterally applied electric field (≤10 kV/cm) on the photoluminescence of colloidal PbS quantum dots (diameter of 2.7 nm) on glass was studied. The field provoked a blueshift of the emission peak, a reduction of the luminescent intensity, and caused an increase in the full width at ha...

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Veröffentlicht in:AIP advances 2012-12, Vol.2 (4), p.042132-042132-5
Hauptverfasser: Ullrich, B., Wang, J. S., Brown, G. J.
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description The effect of a laterally applied electric field (≤10 kV/cm) on the photoluminescence of colloidal PbS quantum dots (diameter of 2.7 nm) on glass was studied. The field provoked a blueshift of the emission peak, a reduction of the luminescent intensity, and caused an increase in the full width at half maximum of the emission spectrum. Upon comparison with the photoluminescence of p-type GaAs exhibits the uniqueness of quantum dot based electric emission control with respect to bulk materials.
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fullrecord <record><control><sourceid>proquest_scita</sourceid><recordid>TN_cdi_proquest_miscellaneous_1671486152</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><doaj_id>oai_doaj_org_article_126d7815440b4f789586668276c18bfc</doaj_id><sourcerecordid>1671486152</sourcerecordid><originalsourceid>FETCH-LOGICAL-c433t-1e6f3f7f2dbb09aa44d3270af447740ae6dfcff97a0210db6aaef2bd0c2fe2523</originalsourceid><addsrcrecordid>eNqdkEtLAzEUhYMoWGoX_oNZqjA1r0lmViLFR6FgQV2HTB5tynTSJhnBf-_YKerau7mXy8c5nAPAJYJTBBm5RVPKGSO4OgEjjIoyJxiz0z_3OZjEuIH90ArBko7A3XLtk2-6rWtNVKZVJutabUK2dqt1bhqjUnAqs840OvM2W9av2b6Tbeq2mfYpXoAzK5toJsc9Bu-PD2-z53zx8jSf3S9yRQlJOTLMEsst1nUNKykp1QRzKC2lnFMoDdNWWVtxCTGCumZSGotrDRW2BheYjMF80NVebsQuuK0Mn8JLJw4PH1ZChuRUYwTCTPMSFZTCmlpeVkXJGCsxZwqVtVW91tWgtQt-35mYxNb12ZtGtsZ3USDGES0ZOtheD6gKPsZg7I81guK7c4HEsfOevRnYqFySyfn2f_CHD7-g2GlLvgDCLI55</addsrcrecordid><sourcetype>Open Website</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1671486152</pqid></control><display><type>article</type><title>Photoluminescence under high-electric field of PbS quantum dots</title><source>DOAJ Directory of Open Access Journals</source><source>Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals</source><source>Alma/SFX Local Collection</source><source>Free Full-Text Journals in Chemistry</source><creator>Ullrich, B. ; Wang, J. S. ; Brown, G. J.</creator><creatorcontrib>Ullrich, B. ; Wang, J. S. ; Brown, G. J.</creatorcontrib><description>The effect of a laterally applied electric field (≤10 kV/cm) on the photoluminescence of colloidal PbS quantum dots (diameter of 2.7 nm) on glass was studied. The field provoked a blueshift of the emission peak, a reduction of the luminescent intensity, and caused an increase in the full width at half maximum of the emission spectrum. Upon comparison with the photoluminescence of p-type GaAs exhibits the uniqueness of quantum dot based electric emission control with respect to bulk materials.</description><identifier>ISSN: 2158-3226</identifier><identifier>EISSN: 2158-3226</identifier><identifier>DOI: 10.1063/1.4766329</identifier><identifier>CODEN: AAIDBI</identifier><language>eng</language><publisher>AIP Publishing LLC</publisher><subject>Electric fields ; Emissions control ; Gallium arsenide ; Gallium arsenides ; Glass ; Photoluminescence ; Quantum dots ; Uniqueness</subject><ispartof>AIP advances, 2012-12, Vol.2 (4), p.042132-042132-5</ispartof><rights>Author(s)</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c433t-1e6f3f7f2dbb09aa44d3270af447740ae6dfcff97a0210db6aaef2bd0c2fe2523</citedby><cites>FETCH-LOGICAL-c433t-1e6f3f7f2dbb09aa44d3270af447740ae6dfcff97a0210db6aaef2bd0c2fe2523</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,860,2096,27901,27902</link.rule.ids></links><search><creatorcontrib>Ullrich, B.</creatorcontrib><creatorcontrib>Wang, J. S.</creatorcontrib><creatorcontrib>Brown, G. J.</creatorcontrib><title>Photoluminescence under high-electric field of PbS quantum dots</title><title>AIP advances</title><description>The effect of a laterally applied electric field (≤10 kV/cm) on the photoluminescence of colloidal PbS quantum dots (diameter of 2.7 nm) on glass was studied. The field provoked a blueshift of the emission peak, a reduction of the luminescent intensity, and caused an increase in the full width at half maximum of the emission spectrum. Upon comparison with the photoluminescence of p-type GaAs exhibits the uniqueness of quantum dot based electric emission control with respect to bulk materials.</description><subject>Electric fields</subject><subject>Emissions control</subject><subject>Gallium arsenide</subject><subject>Gallium arsenides</subject><subject>Glass</subject><subject>Photoluminescence</subject><subject>Quantum dots</subject><subject>Uniqueness</subject><issn>2158-3226</issn><issn>2158-3226</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><sourceid>DOA</sourceid><recordid>eNqdkEtLAzEUhYMoWGoX_oNZqjA1r0lmViLFR6FgQV2HTB5tynTSJhnBf-_YKerau7mXy8c5nAPAJYJTBBm5RVPKGSO4OgEjjIoyJxiz0z_3OZjEuIH90ArBko7A3XLtk2-6rWtNVKZVJutabUK2dqt1bhqjUnAqs840OvM2W9av2b6Tbeq2mfYpXoAzK5toJsc9Bu-PD2-z53zx8jSf3S9yRQlJOTLMEsst1nUNKykp1QRzKC2lnFMoDdNWWVtxCTGCumZSGotrDRW2BheYjMF80NVebsQuuK0Mn8JLJw4PH1ZChuRUYwTCTPMSFZTCmlpeVkXJGCsxZwqVtVW91tWgtQt-35mYxNb12ZtGtsZ3USDGES0ZOtheD6gKPsZg7I81guK7c4HEsfOevRnYqFySyfn2f_CHD7-g2GlLvgDCLI55</recordid><startdate>20121201</startdate><enddate>20121201</enddate><creator>Ullrich, B.</creator><creator>Wang, J. S.</creator><creator>Brown, G. J.</creator><general>AIP Publishing LLC</general><scope>AJDQP</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>DOA</scope></search><sort><creationdate>20121201</creationdate><title>Photoluminescence under high-electric field of PbS quantum dots</title><author>Ullrich, B. ; Wang, J. S. ; Brown, G. J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c433t-1e6f3f7f2dbb09aa44d3270af447740ae6dfcff97a0210db6aaef2bd0c2fe2523</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Electric fields</topic><topic>Emissions control</topic><topic>Gallium arsenide</topic><topic>Gallium arsenides</topic><topic>Glass</topic><topic>Photoluminescence</topic><topic>Quantum dots</topic><topic>Uniqueness</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ullrich, B.</creatorcontrib><creatorcontrib>Wang, J. S.</creatorcontrib><creatorcontrib>Brown, G. J.</creatorcontrib><collection>AIP Open Access Journals</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>DOAJ Directory of Open Access Journals</collection><jtitle>AIP advances</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ullrich, B.</au><au>Wang, J. S.</au><au>Brown, G. J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Photoluminescence under high-electric field of PbS quantum dots</atitle><jtitle>AIP advances</jtitle><date>2012-12-01</date><risdate>2012</risdate><volume>2</volume><issue>4</issue><spage>042132</spage><epage>042132-5</epage><pages>042132-042132-5</pages><issn>2158-3226</issn><eissn>2158-3226</eissn><coden>AAIDBI</coden><abstract>The effect of a laterally applied electric field (≤10 kV/cm) on the photoluminescence of colloidal PbS quantum dots (diameter of 2.7 nm) on glass was studied. The field provoked a blueshift of the emission peak, a reduction of the luminescent intensity, and caused an increase in the full width at half maximum of the emission spectrum. Upon comparison with the photoluminescence of p-type GaAs exhibits the uniqueness of quantum dot based electric emission control with respect to bulk materials.</abstract><pub>AIP Publishing LLC</pub><doi>10.1063/1.4766329</doi><tpages>5</tpages><oa>free_for_read</oa></addata></record>
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subjects Electric fields
Emissions control
Gallium arsenide
Gallium arsenides
Glass
Photoluminescence
Quantum dots
Uniqueness
title Photoluminescence under high-electric field of PbS quantum dots
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-15T19%3A42%3A20IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_scita&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Photoluminescence%20under%20high-electric%20field%20of%20PbS%20quantum%20dots&rft.jtitle=AIP%20advances&rft.au=Ullrich,%20B.&rft.date=2012-12-01&rft.volume=2&rft.issue=4&rft.spage=042132&rft.epage=042132-5&rft.pages=042132-042132-5&rft.issn=2158-3226&rft.eissn=2158-3226&rft.coden=AAIDBI&rft_id=info:doi/10.1063/1.4766329&rft_dat=%3Cproquest_scita%3E1671486152%3C/proquest_scita%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1671486152&rft_id=info:pmid/&rft_doaj_id=oai_doaj_org_article_126d7815440b4f789586668276c18bfc&rfr_iscdi=true