Photoluminescence under high-electric field of PbS quantum dots

Photoluminescence under high-electric field of PbS quantum dots

The effect of a laterally applied electric field (≤10 kV/cm) on the photoluminescence of colloidal PbS quantum dots (diameter of 2.7 nm) on glass was studied. The field provoked a blueshift of the emission peak, a reduction of the luminescent intensity, and caused an increase in the full width at ha...

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Veröffentlicht in:AIP advances 2012-12, Vol.2 (4), p.042132-042132-5
Hauptverfasser: Ullrich, B., Wang, J. S., Brown, G. J.
Format: Artikel
Sprache:eng
Schlagworte:
Electric fields
Emissions control
Gallium arsenide
Gallium arsenides
Glass
Photoluminescence
Quantum dots
Uniqueness
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Zusammenfassung:The effect of a laterally applied electric field (≤10 kV/cm) on the photoluminescence of colloidal PbS quantum dots (diameter of 2.7 nm) on glass was studied. The field provoked a blueshift of the emission peak, a reduction of the luminescent intensity, and caused an increase in the full width at half maximum of the emission spectrum. Upon comparison with the photoluminescence of p-type GaAs exhibits the uniqueness of quantum dot based electric emission control with respect to bulk materials.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.4766329