Perpendicular magnetization of Co20Fe50Ge30 films induced by MgO interface
Epitaxial growth of Co20Fe50Ge30 films on single crystal MgO (001) substrate is reported. Structure characterization revealed (001)-oriented B2 order of Co20Fe50Ge30, well lattice matched with the MgO barrier. Perpendicular magnetic anisotropy was achieved in the MgO/Co20Fe50Ge30/MgO structure with...
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| Veröffentlicht in: | Applied physics letters 2012-09, Vol.101 (12) |
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| container_title | Applied physics letters |
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| creator | Ding, Manli Joseph Poon, S. |
| description | Epitaxial growth of Co20Fe50Ge30 films on single crystal MgO (001) substrate is reported. Structure characterization revealed (001)-oriented B2 order of Co20Fe50Ge30, well lattice matched with the MgO barrier. Perpendicular magnetic anisotropy was achieved in the MgO/Co20Fe50Ge30/MgO structure with an optimized magnetic anisotropy energy density of 2 × 106 erg/cm3. The magnetic anisotropy is found to depend strongly on the thickness of the MgO and Co20Fe50Ge30 layers, indicating that the perpendicular magnetic anisotropy of Co20Fe50Ge30 is contributed by the interfacial anisotropy between Co20Fe50Ge30 and MgO. With reported low damping constant, Co20Fe50Ge30 films are promising spintronic materials for achieving low switching current. |
| doi_str_mv | 10.1063/1.4754001 |
| format | Article |
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Structure characterization revealed (001)-oriented B2 order of Co20Fe50Ge30, well lattice matched with the MgO barrier. Perpendicular magnetic anisotropy was achieved in the MgO/Co20Fe50Ge30/MgO structure with an optimized magnetic anisotropy energy density of 2 × 106 erg/cm3. The magnetic anisotropy is found to depend strongly on the thickness of the MgO and Co20Fe50Ge30 layers, indicating that the perpendicular magnetic anisotropy of Co20Fe50Ge30 is contributed by the interfacial anisotropy between Co20Fe50Ge30 and MgO. With reported low damping constant, Co20Fe50Ge30 films are promising spintronic materials for achieving low switching current.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4754001</identifier><language>eng</language><subject>Damping ; Energy density ; Epitaxial growth ; Lattices ; Magnesium oxide ; Magnetic anisotropy ; Magnetization ; Switching</subject><ispartof>Applied physics letters, 2012-09, Vol.101 (12)</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c293t-6447a338a2f0433c92a4c763a9f3d528e9502d7003787c5bf494b0d0cd54fb5d3</citedby><cites>FETCH-LOGICAL-c293t-6447a338a2f0433c92a4c763a9f3d528e9502d7003787c5bf494b0d0cd54fb5d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Ding, Manli</creatorcontrib><creatorcontrib>Joseph Poon, S.</creatorcontrib><title>Perpendicular magnetization of Co20Fe50Ge30 films induced by MgO interface</title><title>Applied physics letters</title><description>Epitaxial growth of Co20Fe50Ge30 films on single crystal MgO (001) substrate is reported. Structure characterization revealed (001)-oriented B2 order of Co20Fe50Ge30, well lattice matched with the MgO barrier. Perpendicular magnetic anisotropy was achieved in the MgO/Co20Fe50Ge30/MgO structure with an optimized magnetic anisotropy energy density of 2 × 106 erg/cm3. The magnetic anisotropy is found to depend strongly on the thickness of the MgO and Co20Fe50Ge30 layers, indicating that the perpendicular magnetic anisotropy of Co20Fe50Ge30 is contributed by the interfacial anisotropy between Co20Fe50Ge30 and MgO. With reported low damping constant, Co20Fe50Ge30 films are promising spintronic materials for achieving low switching current.</description><subject>Damping</subject><subject>Energy density</subject><subject>Epitaxial growth</subject><subject>Lattices</subject><subject>Magnesium oxide</subject><subject>Magnetic anisotropy</subject><subject>Magnetization</subject><subject>Switching</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNotkMtOwzAURC0EEqWw4A-yhEXKta8dJ0tU0QIqKgtYW44flVEexU4W5esb1K5GRxqNRoeQewoLCgU-0QWXggPQCzKjIGWOlJaXZAYAmBeVoNfkJqWfCQVDnJH3Txf3rrPBjI2OWat3nRvCnx5C32W9z5Y9g5UTsHYImQ9Nm7LQ2dE4m9WH7GO3nXBw0WvjbsmV101yd-eck-_Vy9fyNd9s12_L501uWIVDXnAuNWKpmQeOaCqmuZEF6sqjFax0lQBm5fRXltKI2vOK12DBWMF9LSzOycNpdx_739GlQbUhGdc0unP9mBQtJOUlp4xO1cdT1cQ-pei82sfQ6nhQFNS_L0XV2RceAY-WWkc</recordid><startdate>20120917</startdate><enddate>20120917</enddate><creator>Ding, Manli</creator><creator>Joseph Poon, S.</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20120917</creationdate><title>Perpendicular magnetization of Co20Fe50Ge30 films induced by MgO interface</title><author>Ding, Manli ; Joseph Poon, S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c293t-6447a338a2f0433c92a4c763a9f3d528e9502d7003787c5bf494b0d0cd54fb5d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Damping</topic><topic>Energy density</topic><topic>Epitaxial growth</topic><topic>Lattices</topic><topic>Magnesium oxide</topic><topic>Magnetic anisotropy</topic><topic>Magnetization</topic><topic>Switching</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ding, Manli</creatorcontrib><creatorcontrib>Joseph Poon, S.</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ding, Manli</au><au>Joseph Poon, S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Perpendicular magnetization of Co20Fe50Ge30 films induced by MgO interface</atitle><jtitle>Applied physics letters</jtitle><date>2012-09-17</date><risdate>2012</risdate><volume>101</volume><issue>12</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Epitaxial growth of Co20Fe50Ge30 films on single crystal MgO (001) substrate is reported. Structure characterization revealed (001)-oriented B2 order of Co20Fe50Ge30, well lattice matched with the MgO barrier. Perpendicular magnetic anisotropy was achieved in the MgO/Co20Fe50Ge30/MgO structure with an optimized magnetic anisotropy energy density of 2 × 106 erg/cm3. The magnetic anisotropy is found to depend strongly on the thickness of the MgO and Co20Fe50Ge30 layers, indicating that the perpendicular magnetic anisotropy of Co20Fe50Ge30 is contributed by the interfacial anisotropy between Co20Fe50Ge30 and MgO. With reported low damping constant, Co20Fe50Ge30 films are promising spintronic materials for achieving low switching current.</abstract><doi>10.1063/1.4754001</doi><oa>free_for_read</oa></addata></record> |
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| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2012-09, Vol.101 (12) |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_1671484121 |
| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| subjects | Damping Energy density Epitaxial growth Lattices Magnesium oxide Magnetic anisotropy Magnetization Switching |
| title | Perpendicular magnetization of Co20Fe50Ge30 films induced by MgO interface |
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