Perpendicular magnetization of Co20Fe50Ge30 films induced by MgO interface

Perpendicular magnetization of Co20Fe50Ge30 films induced by MgO interface

Epitaxial growth of Co20Fe50Ge30 films on single crystal MgO (001) substrate is reported. Structure characterization revealed (001)-oriented B2 order of Co20Fe50Ge30, well lattice matched with the MgO barrier. Perpendicular magnetic anisotropy was achieved in the MgO/Co20Fe50Ge30/MgO structure with...

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Veröffentlicht in:Applied physics letters 2012-09, Vol.101 (12)
Hauptverfasser: Ding, Manli, Joseph Poon, S.
Format: Artikel
Sprache:eng
Schlagworte:
Damping
Energy density
Epitaxial growth
Lattices
Magnesium oxide
Magnetic anisotropy
Magnetization
Switching
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Zusammenfassung:Epitaxial growth of Co20Fe50Ge30 films on single crystal MgO (001) substrate is reported. Structure characterization revealed (001)-oriented B2 order of Co20Fe50Ge30, well lattice matched with the MgO barrier. Perpendicular magnetic anisotropy was achieved in the MgO/Co20Fe50Ge30/MgO structure with an optimized magnetic anisotropy energy density of 2 × 106 erg/cm3. The magnetic anisotropy is found to depend strongly on the thickness of the MgO and Co20Fe50Ge30 layers, indicating that the perpendicular magnetic anisotropy of Co20Fe50Ge30 is contributed by the interfacial anisotropy between Co20Fe50Ge30 and MgO. With reported low damping constant, Co20Fe50Ge30 films are promising spintronic materials for achieving low switching current.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4754001