Femtosecond laser pulse ablation of GaAs and InP: studies utilizing scanning and transmission electron microscopy

Femtosecond laser pulse ablation of GaAs and InP: studies utilizing scanning and transmission electron microscopy

Single pulse laser ablation of GaAs and InP using 130 fs light pulses at {/content/868H1G0MBBWMWLW5/xxlarge8776.gif}800 nm was studied with various techniques, in particular, scanning and transmission electron microscopies. The final state of the material near the laser-ablated region following femt...

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Veröffentlicht in:Applied physics. A, Materials science & processing Materials science & processing, 2003-08, Vol.77 (3-4), p.411-417
Hauptverfasser: Borowiec, A., MacKenzie, M., Weatherly, G.C., Haugen, H.K.
Format: Artikel
Sprache:eng
Schlagworte:
Ablation
Femtosecond
Gallium arsenide
Gallium arsenides
Indium phosphides
Laser ablation
Lasers
Scanning electron microscopy
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Zusammenfassung:Single pulse laser ablation of GaAs and InP using 130 fs light pulses at {/content/868H1G0MBBWMWLW5/xxlarge8776.gif}800 nm was studied with various techniques, in particular, scanning and transmission electron microscopies. The final state of the material near the laser-ablated region following femtosecond ablation was characterized in detail for selected laser fluences. Threshold ablation laser fluences were also obtained for both compounds.
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-002-1949-8