Van der Waals Epitaxial Double Heterostructure: InAs/Single-Layer Graphene/InAs

Van der Waals Epitaxial Double Heterostructure: InAs/Single-Layer Graphene/InAs

Van der Waals (vdW) epitaxial double heterostructures have been fabricated by vdW epitaxy of InAs nanostructures on both sides of graphene. InAs nanostructures diametrically form on/underneath graphene exclusively along As‐polar direction, indicating polarity inversion of the double heterostructures...

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Veröffentlicht in:Advanced materials (Weinheim) 2013-12, Vol.25 (47), p.6847-6853
Hauptverfasser: Hong, Young Joon, Yang, Jae Won, Lee, Wi Hyoung, Ruoff, Rodney S., Kim, Kwang S., Fukui, Takashi
Format: Artikel
Sprache:eng
Schlagworte:
Arsenicals - chemistry
Crystallization
double heterostructures
Epitaxy
Graphene
Graphite - chemistry
Heterostructures
Indium - chemistry
indium arsenide
Indium arsenides
metal-organic vapor-phase epitaxy
Nanocomposites
Nanomaterials
Nanostructure
Nanostructures - chemistry
Nanowires - chemistry
Particle Size
Polarity
Static Electricity
van der Waals epitaxy
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Beschreibung
Zusammenfassung:Van der Waals (vdW) epitaxial double heterostructures have been fabricated by vdW epitaxy of InAs nanostructures on both sides of graphene. InAs nanostructures diametrically form on/underneath graphene exclusively along As‐polar direction, indicating polarity inversion of the double heterostructures. First‐principles and density functional calculations demonstrate how and why InAs easily form to be double heterostructures with polarity inversion.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201302312