Arc-instability generated during the Joule heating induced crystallization of amorphous silicon films

Joule heating induced crystallization (JIC) was accomplished by applying an electric field to a conductive layer located beneath the amorphous silicon film. This study found that an intense arc is generated at the interface between the silicon and the electrode. The artificial modification of a JIC-...

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Veröffentlicht in:Thin solid films 2011-01, Vol.519 (7), p.2371-2375
Hauptverfasser: Hong, Won-Eui, Ro, Jae-Sang
Format: Artikel
Sprache:eng
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Zusammenfassung:Joule heating induced crystallization (JIC) was accomplished by applying an electric field to a conductive layer located beneath the amorphous silicon film. This study found that an intense arc is generated at the interface between the silicon and the electrode. The artificial modification of a JIC-sample structure led us to the finding that arc generation is caused by the dielectric breakdown of a SiO 2 layer that is sandwiched between the transformed polycrystalline silicon and a conductive layer at high temperatures during Joule heating.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2010.11.016