Low Temperature Grown Be-doped InGaAs/InAlAs Photoconductive Antennas Excited at 1030 nm

Low Temperature Grown Be-doped InGaAs/InAlAs Photoconductive Antennas Excited at 1030 nm

We demonstrate pulsed THz emission and detection in low temperature (LT) MBE grown Be-doped InGaAs/InAlAs multi-nanolayer structures for an excitation wavelength of 1030 nm. We obtained spectra with a bandwidth of up to 3 THz. Furthermore, we performed differential transmission experiments to invest...

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Veröffentlicht in:Journal of infrared, millimeter and terahertz waves millimeter and terahertz waves, 2013-04, Vol.34 (3-4), p.231-237
Hauptverfasser: Dietz, R. J. B., Wilk, R., Globisch, B., Roehle, H., Stanze, D., Ullrich, S., Schumann, S., Born, N., Koch, M., Sartorius, B., Schell, M.
Format: Artikel
Sprache:eng
Schlagworte:
Antennas
Bandwidths
Beryllium
Classical Electrodynamics
Constants
Electrical Engineering
Electronics and Microelectronics
Engineering
Excitation
Indium aluminum arsenides
Indium gallium arsenides
Infrared
Instrumentation
Low temperature
Molecular beam epitaxy
Relaxation time
Spectra
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Zusammenfassung:We demonstrate pulsed THz emission and detection in low temperature (LT) MBE grown Be-doped InGaAs/InAlAs multi-nanolayer structures for an excitation wavelength of 1030 nm. We obtained spectra with a bandwidth of up to 3 THz. Furthermore, we performed differential transmission experiments to investigate the material’s relaxation time constants.
ISSN:1866-6892
1866-6906
DOI:10.1007/s10762-013-9968-4