Two modes of HVPE growth of GaN and related macrodefects

GaN films with thickness up to 3 mm were grown by halide vapour phase epitaxy method. Two growth modes were observed: the high temperature (HT) mode and the low temperature (LT) mode. Films grown in HT mode had smooth surface, however the growth stress was high and caused cracking. Films grown in LT...

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Veröffentlicht in:	Physica status solidi. C 2013-03, Vol.10 (3), p.468-471
Hauptverfasser:	Voronenkov, V. V., Bochkareva, N. I., Gorbunov, R. I., Latyshev, P. E., Lelikov, Y. S., Rebane, Y. T., Tsyuk, A. I., Zubrilov, A. S., Popp, U. W., Strafela, M., Strunk, H. P., Shreter, Y. G.
Format:	Artikel
Sprache:	eng
Schlagworte:	Crack propagation cracks Density Evolution Fracture mechanics Gallium nitrides GaN Heat treatment HVPE macrodefects Pits Solid state physics
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Beschreibung
Zusammenfassung:	GaN films with thickness up to 3 mm were grown by halide vapour phase epitaxy method. Two growth modes were observed: the high temperature (HT) mode and the low temperature (LT) mode. Films grown in HT mode had smooth surface, however the growth stress was high and caused cracking. Films grown in LT mode had rough surface with high density of V‐defects (pits), however, such films were crack‐free. The influence of growth parameters on the pit shape and evolution was investigated. Origins of pits formation and process of pit overgrowth are discussed. Crack‐free films with smooth surface and reduced density of pits were grown using combination of the LT and HT growth modes. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:	1862-6351 1610-1642
DOI:	10.1002/pssc.201200701