Multilayers of Ge nanocrystals embedded in Al2O3 matrix: Structural and electrical studies
Ge/Al2O3 multilayer systems were grown by pulsed laser ablation. The grown samples were annealed at 900 C to promote the formation of Ge nanocrystals. Rutherford backscattering spectroscopy and TEM confirmed the presence of a multilayer system. Grazing incidence small angle X-ray scattering showed t...
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| Veröffentlicht in: | Microelectronic engineering 2010-12, Vol.87 (12), p.2508-2512 |
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| creator | PINTO, S. R. C ROLO, A. G GOMES, M. J. M CHAHBOUN, A BULJAN, Maja KHODOROV, A KASHTIBAN, R. J BANGERT, U BARRADAS, N. P ALVES, E BERNSTORFF, S |
| description | Ge/Al2O3 multilayer systems were grown by pulsed laser ablation. The grown samples were annealed at 900 C to promote the formation of Ge nanocrystals. Rutherford backscattering spectroscopy and TEM confirmed the presence of a multilayer system. Grazing incidence small angle X-ray scattering showed the formation of Ge nanoclusters formed between alumina layers. Room temperature I-V measurements showed weak carrier trapping in the system, explained by the leakage caused by Ge diffusion through the multilayer. |
| doi_str_mv | 10.1016/j.mee.2010.06.002 |
| format | Article |
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R. C ; ROLO, A. G ; GOMES, M. J. M ; CHAHBOUN, A ; BULJAN, Maja ; KHODOROV, A ; KASHTIBAN, R. J ; BANGERT, U ; BARRADAS, N. P ; ALVES, E ; BERNSTORFF, S</creator><creatorcontrib>PINTO, S. R. C ; ROLO, A. G ; GOMES, M. J. M ; CHAHBOUN, A ; BULJAN, Maja ; KHODOROV, A ; KASHTIBAN, R. J ; BANGERT, U ; BARRADAS, N. P ; ALVES, E ; BERNSTORFF, S</creatorcontrib><description>Ge/Al2O3 multilayer systems were grown by pulsed laser ablation. The grown samples were annealed at 900 C to promote the formation of Ge nanocrystals. Rutherford backscattering spectroscopy and TEM confirmed the presence of a multilayer system. Grazing incidence small angle X-ray scattering showed the formation of Ge nanoclusters formed between alumina layers. Room temperature I-V measurements showed weak carrier trapping in the system, explained by the leakage caused by Ge diffusion through the multilayer.</description><identifier>ISSN: 0167-9317</identifier><identifier>EISSN: 1873-5568</identifier><identifier>DOI: 10.1016/j.mee.2010.06.002</identifier><identifier>CODEN: MIENEF</identifier><language>eng</language><publisher>Amsterdam: Elsevier</publisher><subject>Aluminum oxide ; Annealing ; Applied sciences ; Cold working, work hardening; annealing, quenching, tempering, recovery, and recrystallization; textures ; Cross-disciplinary physics: materials science; rheology ; Electronics ; Exact sciences and technology ; Germanium ; Grazing incidence ; Heat treatment ; Laser deposition ; Materials science ; Metals. Metallurgy ; Methods of deposition of films and coatings; film growth and epitaxy ; Microelectronic fabrication (materials and surfaces technology) ; Multilayers ; Nanocrystals ; Nanostructure ; Physics ; Production techniques ; Semiconductor electronics. Microelectronics. Optoelectronics. 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Room temperature I-V measurements showed weak carrier trapping in the system, explained by the leakage caused by Ge diffusion through the multilayer.</description><subject>Aluminum oxide</subject><subject>Annealing</subject><subject>Applied sciences</subject><subject>Cold working, work hardening; annealing, quenching, tempering, recovery, and recrystallization; textures</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Germanium</subject><subject>Grazing incidence</subject><subject>Heat treatment</subject><subject>Laser deposition</subject><subject>Materials science</subject><subject>Metals. 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P</au><au>ALVES, E</au><au>BERNSTORFF, S</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Multilayers of Ge nanocrystals embedded in Al2O3 matrix: Structural and electrical studies</atitle><jtitle>Microelectronic engineering</jtitle><date>2010-12-01</date><risdate>2010</risdate><volume>87</volume><issue>12</issue><spage>2508</spage><epage>2512</epage><pages>2508-2512</pages><issn>0167-9317</issn><eissn>1873-5568</eissn><coden>MIENEF</coden><abstract>Ge/Al2O3 multilayer systems were grown by pulsed laser ablation. The grown samples were annealed at 900 C to promote the formation of Ge nanocrystals. Rutherford backscattering spectroscopy and TEM confirmed the presence of a multilayer system. Grazing incidence small angle X-ray scattering showed the formation of Ge nanoclusters formed between alumina layers. 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| subjects | Aluminum oxide Annealing Applied sciences Cold working, work hardening annealing, quenching, tempering, recovery, and recrystallization textures Cross-disciplinary physics: materials science rheology Electronics Exact sciences and technology Germanium Grazing incidence Heat treatment Laser deposition Materials science Metals. Metallurgy Methods of deposition of films and coatings film growth and epitaxy Microelectronic fabrication (materials and surfaces technology) Multilayers Nanocrystals Nanostructure Physics Production techniques Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Trapping Treatment of materials and its effects on microstructure and properties Volt-ampere characteristics |
| title | Multilayers of Ge nanocrystals embedded in Al2O3 matrix: Structural and electrical studies |
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